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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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STW50N65DM6MOSFET N-CH 650V 33A TO247-3 STMicroelectronics |
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Tabla de datos |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 91mOhm @ 16.5A, 10V | 4.75V @ 250µA | 52.5 nC @ 10 V | ±25V | 52500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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STW58N60DM2AGMOSFET N-CH 600V 50A TO247 STMicroelectronics |
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Tabla de datos |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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STW12N170K5MOSFET N-CH 1700V 5A TO247 STMicroelectronics |
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Tabla de datos |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1700 V | 5A (Tc) | 10V | 2.9Ohm @ 2.5A, 10V | 5V @ 100µA | 37 nC @ 10 V | ±30V | 1380 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW70N60DM2N-channel 600 V, 37 mOhm typ., 6 STMicroelectronics |
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Tabla de datos |
MDmesh™ DM2 | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW75N65DM6-4N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics |
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Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
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Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 55mOhm @ 20A, 18V | 4.2V @ 1mA | 39.5 nC @ 18 V | +18V, -5V | 920 pF @ 400 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCTW35N65G2VSICFET N-CH 650V 45A HIP247 STMicroelectronics |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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SCTW35N65G2VAGSICFET N-CH 650V 45A HIP247 STMicroelectronics |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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STW40N95DK5MOSFET N-CHANNEL 950V 38A TO247 STMicroelectronics |
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Tabla de datos |
MDmesh™ DK5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100 nC @ 10 V | ±30V | 3480 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247 |
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SCTH40N120G2V-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
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Tabla de datos |
- | - | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
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