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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCT3030AW7TLSICFET N-CH 650V 70A TO263-7 |
432 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | - | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 267W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IXTT3N200P3HVMOSFET N-CH 2000V 3A TO268 |
300 |
|
Tabla de datos |
Polar P3™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 3A (Tc) | 10V | 8Ohm @ 1.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±20V | 1860 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXTT) |
|
|
SCT3040KW7TLSICFET N-CH 1200V 56A TO263-7 |
986 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | - | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 267W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
SCT3030ALHRC11SICFET N-CH 650V 70A TO247N |
445 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
STY112N65M5MOSFET N-CH 650V 96A MAX247 |
543 |
|
Tabla de datos |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 47A, 10V | 5V @ 250µA | 350 nC @ 10 V | ±25V | 16870 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | - | - | Through Hole | MAX247™ |
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|
IXTX8N150LMOSFET N-CH 1500V 8A PLUS247-3 |
256 |
|
Tabla de datos |
Linear | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 8A (Tc) | 20V | 3.6Ohm @ 4A, 20V | 8V @ 250µA | 250 nC @ 15 V | ±30V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
SCT3040KLHRC11SICFET N-CH 1200V 55A TO247N |
849 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
S2M0025120DMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
S2M0025120KMOSFET SILICON CARBIDE SIC 1200V |
270 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXFN80N50Q3MOSFET N-CH 500V 63A SOT227B |
140 |
|
Tabla de datos |
HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTN17N120LMOSFET N-CH 1200V 15A SOT-227B |
240 |
|
Tabla de datos |
Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 15A (Tc) | 20V | 900mOhm @ 8.5A, 20V | 5V @ 250µA | 155 nC @ 15 V | ±30V | 8300 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
SCT3022ALHRC11SICFET N-CH 650V 93A TO247N |
2,246 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 93A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133 nC @ 18 V | +22V, -4V | 2208 pF @ 500 V | - | 339W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
SCT3030KLHRC11SICFET N-CH 1200V 72A TO247N |
580 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
IXTB62N50LMOSFET N-CH 500V 62A PLUS264 |
195 |
|
Tabla de datos |
Linear | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 31A, 20V | 5.5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
IXTX1R4N450HVMOSFET N-CH 4500V 1.4A TO247PLUS |
297 |
|
Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247PLUS-HV |
|
|
IXTN30N100LMOSFET N-CH 1000V 30A SOT227B |
593 |
|
Tabla de datos |
Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 20V | 450mOhm @ 15A, 20V | 5.5V @ 250µA | 545 nC @ 20 V | ±30V | 13700 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXTF1R4N450MOSFET N-CH 4500V 1.4A I4PAC |
41 |
|
Tabla de datos |
- | i4-Pac™-5 (3 Leads) | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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|
SCT3017ALGC11650V, 118A, THD, TRENCH-STRUCTUR |
435 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | +22V, -4V | 2884 pF @ 500 V | - | 427W | 175°C (TJ) | - | - | Through Hole | TO-247N |
|
|
SCT3017ALHRC11SICFET N-CH 650V 118A TO247N |
1,098 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | +22V, -4V | 2884 pF @ 500 V | - | 427W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
SCT3022KLHRC11SICFET N-CH 1200V 95A TO247N |
1,127 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178 nC @ 18 V | +22V, -4V | 2879 pF @ 800 V | - | 427W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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