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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R5011FNXMOSFET N-CH 500V 11A TO-220FM Rohm Semiconductor |
418 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 5.5A, 10V | 4V @ 1mA | 30 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 59W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6008FNXMOSFET N-CH 600V 8A TO-220FM Rohm Semiconductor |
777 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 950mOhm @ 4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 580 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6015FNXMOSFET N-CH 600V 15A TO-220FM Rohm Semiconductor |
648 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 5V @ 1mA | 42 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 77W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6015ANXMOSFET N-CH 600V 15A TO220FM Rohm Semiconductor |
166 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 300mOhm @ 7.5A, 10V | 4.5V @ 1mA | 50 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 77W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6046FNZ1C9MOSFET N-CH 600V 46A TO247 Rohm Semiconductor |
278 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 98mOhm @ 23A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 6230 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT3080ARC14SICFET N-CH 650V 30A TO247-4L Rohm Semiconductor |
249 | - |
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Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT3105KRC14SICFET N-CH 1200V 24A TO247-4L Rohm Semiconductor |
102 | - |
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Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT3060ARC14SICFET N-CH 650V 39A TO247-4L Rohm Semiconductor |
344 | - |
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Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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R6046ANZ1C9MOSFET N-CH 600V 46A TO247 Rohm Semiconductor |
444 | - |
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Tabla de datos |
- | TO-247-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 90mOhm @ 23A, 10V | 4.5V @ 1mA | 150 nC @ 10 V | ±30V | 6000 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT3080KRC14SICFET N-CH 1200V 31A TO247-4L Rohm Semiconductor |
270 | - |
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Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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