制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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RF4L070BGTCRNCH 60V 7A, HUML2020L8, POWER MO Rohm Semiconductor |
2,448 | - |
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- | 8-PowerUDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 4.5V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 7.6 nC @ 10 V | ±20V | 460 pF @ 30 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | DFN2020-8S |
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RQ7L055BGTCRNCH 60V 5.5A, TSMT8, POWER MOSFE Rohm Semiconductor |
2,958 | - |
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- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.6 nC @ 10 V | ±20V | 460 pF @ 30 V | - | 1.1W (Ta) | 150°C (TJ) | - | - | Surface Mount | TSMT8 |
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RS3E075ATTB1PCH -30V -7.5A MIDDLE POWER MOSF Rohm Semiconductor |
2,336 | - |
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![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4.5V, 10V | 23.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 25 nC @ 10 V | ±20V | 1250 pF @ 15 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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RSH070N05GZETBMOSFET N-CH 45V 7A 8SOP Rohm Semiconductor |
2,500 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8 nC @ 5 V | ±20V | 1000 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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R6004JNXC7GMOSFET N-CH 600V 4A TO220FM Rohm Semiconductor |
846 | - |
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- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5 nC @ 15 V | ±30V | 260 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6504KNXC7G650V 4A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
995 | - |
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- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 1.05Ohm @ 1.5A, 10V | 5V @ 130µA | 10 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6504ENXC7G650V 4A TO-220FM, LOW-NOISE POWE Rohm Semiconductor |
988 | - |
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- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 1.05Ohm @ 1.5A, 10V | 4V @ 130µA | 15 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6004ENXC7G600V 4A TO-220FM, LOW-NOISE POWE Rohm Semiconductor |
820 | - |
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- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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RRS050P03HZGTBAUTOMOTIVE PCH -30V -5A POWER MO Rohm Semiconductor |
2,286 | - |
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![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4V, 10V | 50mOhm @ 5A, 10V | 2.5V @ 1mA | 9.2 nC @ 5 V | ±20V | 850 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOP |
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RSH065N06GZETBMOSFET N-CH 60V 6.5A 8SOP Rohm Semiconductor |
109 | - |
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![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16 nC @ 5 V | 20V | 900 pF @ 10 V | - | 2W (Ta) | 150°C | - | - | Surface Mount | 8-SOP |