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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RW4E045ATTCL1PCH -30V -4.5A POWER MOSFET. RW4 Rohm Semiconductor |
2,940 |
|
Tabla de datos |
- | 6-PowerUFDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4.5V, 10V | 48mOhm @ 4.5A, 10V | 2.5V @ 1mA | 11 nC @ 10 V | ±20V | 485 pF @ 15 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | DFN1616-7T |
|
RV4E031RPHZGTCR1MOSFET P-CH 30V 3.1A DFN1616-6W Rohm Semiconductor |
5,601 |
|
Tabla de datos |
- | 6-PowerWFDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | - | 105mOhm @ 3.1A, 10V | 2.5V @ 1mA | 4.8 nC @ 5 V | ±20V | 460 pF @ 10 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | DFN1616-6W |
|
RQ1E075XNTCRMOSFET N-CH 30V 7.5A TSMT8 Rohm Semiconductor |
26,788 |
|
Tabla de datos |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4V, 10V | 17mOhm @ 7.5A, 10V | 2.5V @ 1mA | 6.8 nC @ 5 V | ±20V | 440 pF @ 10 V | - | 1.1W (Ta) | 150°C (TJ) | - | - | Surface Mount | TSMT8 |
|
RS1E200GNTBMOSFET N-CH 30V 20A 8HSOP Rohm Semiconductor |
2,414 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 57A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.5V @ 1mA | 16.8 nC @ 10 V | ±20V | 1080 pF @ 15 V | - | 3W (Ta), 25W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
RS3L045GNGZETBMOSFET N-CH 60V 4.5A 8SOP Rohm Semiconductor |
833 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.5A (Ta) | 4.5V, 10V | 59mOhm @ 4.5A, 10V | 2.7V @ 50µA | 5.6 nC @ 10 V | ±20V | 285 pF @ 30 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
RQ1A070APTRMOSFET P-CH 12V 7A TSMT8 Rohm Semiconductor |
3,473 |
|
Tabla de datos |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 7A (Ta) | 1.5V, 4.5V | 14mOhm @ 7A, 4.5V | 1V @ 1mA | 80 nC @ 4.5 V | -8V | 7800 pF @ 6 V | - | 550mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSMT8 |
|
RQ6C050BCTCRMOSFET P-CH 20V 5A TSMT6 Rohm Semiconductor |
880 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Tc) | 4.5V | 36mOhm @ 5A, 4.5V | 1.2V @ 1mA | 10.4 nC @ 4.5 V | ±8V | 740 pF @ 10 V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TSMT6 (SC-95) |
|
|
RUQ050N02HZGTRMOSFET N-CH 20V 5A TSMT6 Rohm Semiconductor |
6,947 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.5V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 1mA | 12 nC @ 4.5 V | ±10V | 900 pF @ 10 V | - | 950mW (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TSMT6 (SC-95) |
|
|
RTQ035P02HZGTRMOSFET P-CH 20V 3.5A TSMT6 Rohm Semiconductor |
2,687 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.5A, 4.5V | 2V @ 1mA | 10.5 nC @ 4.5 V | ±12V | 1200 pF @ 10 V | - | 950mW (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TSMT6 (SC-95) |
|
|
RQ6A050ZPTRMOSFET P-CH 12V 5A TSMT6 Rohm Semiconductor |
4,938 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 5A (Ta) | 1.5V, 4.5V | 26mOhm @ 5A, 4.5V | 1V @ 1mA | 35 nC @ 4.5 V | ±10V | 2850 pF @ 6 V | - | 950mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSMT6 (SC-95) |
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