制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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NVH050N65S3FSF3 FRFET AUTO 50MOHM TO-247 onsemi |
443 | - |
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SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123 nC @ 10 V | ±30V | 5404 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVMTS0D7N06CTXGMOSFET N-CH 60V 60.5A/464A 8DFNW onsemi |
2,635 | - |
|
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60.5A (Ta), 464A (Tc) | 10V | 0.72mOhm @ 50A, 10V | 4V @ 250µA | 152 nC @ 10 V | ±20V | 11535 pF @ 30 V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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NVH4L095N065SC1SILICON CARBIDE (SIC) MOSFET, NC onsemi |
445 | - |
|
![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | 4.3V @ 4mA | 50 nC @ 18 V | +22V, -8V | 956 pF @ 325 V | - | 129W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NVHL075N065SC1SILICON CARBIDE (SIC) MOSFET, NC onsemi |
446 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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NVH4L050N65S3FSF3 FRFET AUTO 50MOHM TO-247-4L onsemi |
405 | - |
|
![]() Tabla de datos |
SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123.8 nC @ 10 V | ±30V | 4855 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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NVH4L075N065SC1SIC MOS TO247-4L 650V onsemi |
240 | - |
|
![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NTHL030N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
351 | - |
|
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVHL060N090SC1SICFET N-CH 900V 46A TO247-3 onsemi |
383 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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NVHL040N65S3HFSUPERFER3 FRFET AUTOMOTIVE 40MOH onsemi |
430 | - |
|
![]() Tabla de datos |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 157 nC @ 10 V | ±30V | 6655 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NTH4L030N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
422 | - |
|
![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |