制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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NTMTS1D5N08MCPTNG 80V IN CEBU PQFN88 onsemi |
3,000 | - |
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 33A (Ta), 287A (Tc) | 6V, 10V | 1.56mOhm @ 80A, 10V | 4V @ 650µA | 140 nC @ 10 V | ±20V | 10400 pF @ 40 V | - | 3.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFNW (8.3x8.4) |
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NTH4L095N065SC1SIC MOS TO247-4L 650V onsemi |
420 | - |
|
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | 4.3V @ 4mA | 50 nC @ 10 V | +22V, -8V | 956 pF @ 325 V | - | 129W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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NTH4L070N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
175 | - |
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NTMFS5C604NLT3GMOSFET N-CH 60V 40A/287A 5DFN onsemi |
4,853 | - |
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- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVMTS1D1N04CTXGT6 40V SL AIZU SINGLE NCH PQFN 8 onsemi |
2,909 | - |
|
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 48.8A (Ta), 277A (Tc) | 10V | 1.1mOhm @ 50A, 10V | 4V @ 210µA | 86 nC @ 10 V | ±20V | 5410 pF @ 25 V | - | 4.7W (Ta), 153W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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NTBLS1D5N10MCTXGMOSFET - POWER, SINGLE, N-CHANNE onsemi |
1,415 | - |
|
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- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Ta), 312A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 799µA | 131 nC @ 10 V | ±20V | 10100 pF @ 50 V | - | 3.4W (Ta), 322W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
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NTBL060N065SC1M2 650V SIC MOSFET 60MOHM WITH T onsemi |
1,998 | - |
|
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- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
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NVMTS001N06CTXGMOSFET N-CH 60V 53.7A/376A 8DFNW onsemi |
6,000 | - |
|
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53.7A (Ta), 376A (Tc) | 10V | 0.91mOhm @ 50A, 10V | 4V @ 250µA | 113 nC @ 10 V | ±20V | 8705 pF @ 30 V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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NTHL075N065SC1SILICON CARBIDE (SIC) MOSFET - E onsemi |
730 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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FCMT080N65S3MOSFET N-CH 650V 38A 4TDFN onsemi |
3,000 | - |
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SuperFET® III | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 80mOhm @ 19A, 10V | 4.5V @ 880µA | 71 nC @ 10 V | ±30V | 2765 pF @ 400 V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-TDFN (8x8) |