Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT100MC120JCU2SICFET N-CH 1200V 143A SOT227 Microchip Technology |
4,960 | - |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360 nC @ 20 V | +25V, -10V | 5960 pF @ 1000 V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
APT50MC120JCU2MOSFET N-CH 1200V 71A SOT227 Microchip Technology |
3,053 | - |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1200 V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179 nC @ 20 V | +25V, -10V | 2980 pF @ 1000 V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD Microchip Technology |
2,260 | - |
|
Tabla de datos |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
APT1001RBNMOSFET N-CH 1000V 11A TO247AD Microchip Technology |
2,093 | - |
|
Tabla de datos |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
APT5020BNMOSFET N-CH 500V 28A TO247AD Microchip Technology |
2,253 | - |
|
Tabla de datos |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
APT5020BNFRMOSFET N-CH 500V 28A TO247AD Microchip Technology |
4,452 | - |
|
- |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 Microchip Technology |
3,750 | - |
|
- |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | - | - | Surface Mount | SOT-23-3 |
|
|
TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 Microchip Technology |
4,010 | - |
|
- |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology |
4,354 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 Microchip Technology |
3,005 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.7V @ 7mA | 410 nC @ 20 V | +23V, -10V | 8720 pF @ 2640 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
