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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT12040JVRMOSFET N-CH 1200V 26A SOT227 Microchip Technology |
43 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
MSCSM120SKM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 Microchip Technology |
31 |
|
Tabla de datos |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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|
VN2222LL-G-P003MOSFET N-CH 60V 230MA TO92-3 Microchip Technology |
2,004 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60 pF @ 25 V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
|
DN2535N3-G-P003MOSFET N-CH 350V 120MA TO92 Microchip Technology |
1,981 |
|
- |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 350 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
|
|
VN0300L-G-P002MOSFET N-CH 30V 640MA TO92-3 Microchip Technology |
1,874 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190 pF @ 20 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
|
|
APT9M100S/TRMOSFET MOS8 1000 V 9 A TO-268 Microchip Technology |
324 |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2605 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
APT7F120SMOSFET N-CH 1200V 7A D3PAK Microchip Technology |
240 |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 7A (Tc) | 10V | 2.4Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
MSC090SMA070SSICFET N-CH 700V D3PAK Microchip Technology |
103 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
MSC180SMA120BMOSFET 1200V 25A TO-247 Microchip Technology |
105 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 21A (Tc) | 5V, 20V | 225mOhm @ 8A, 20V | 4.5V @ 500µA | 36 nC @ 20 V | +23V, -10V | 530 pF @ 1000 V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
MSC040SMA120S/TRMOSFET SIC 1200 V 40 MOHM TO-268 Microchip Technology |
397 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
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