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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC015SMA070B4NMOSFET SIC 700 V 15 MOHM TO-247- Microchip Technology |
60 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 112A (Tc) | 18V, 20V | 19mOhm @ 40A, 20V | 5V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4324 pF @ 700 V | - | 524W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSC017SMA120B4NMOSFET SIC 1200 V 17 MOHM TO-247 Microchip Technology |
30 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 119A (Tc) | 18V, 20V | 22mOhm @ 40A, 20V | 5V @ 4.5mA | 194 nC @ 20 V | +23V, -10V | 4274 pF @ 1200 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSC025SMA120B4NMOSFET SIC 1200 V 25 MOHM TO-247 Microchip Technology |
30 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 113A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | 5V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3633 pF @ 1000 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSC080SMA120JS15MOSFET SIC 1200V 80 MOHM 15A SOT Microchip Technology |
15 | - |
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Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSC017SMA120BMOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology |
38 | - |
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Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT50M50JVRMOSFET N-CH 500V 77A ISOTOP Microchip Technology |
10 | - |
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Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT20M11JVRMOSFET N-CH 200V 175A ISOTOP Microchip Technology |
6 | - |
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Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10025JVRMOSFET N-CH 1000V 34A ISOTOP Microchip Technology |
10 | - |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT8011JLLMOSFET N-CH 800V 51A ISOTOP Microchip Technology |
8 | - |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT60M60JLLMOSFET N-CH 600V 70A ISOTOP Microchip Technology |
10 | - |
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Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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