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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFG60P05EMOSFET P-CH 50V 60A TO247-3 |
4,303 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 60A (Tc) | 10V | 30mOhm @ 60A, 10V | 4V @ 250µA | 450 nC @ 20 V | ±20V | 7200 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
STW25N95K3MOSFET N-CH 950V 22A TO247 |
2,813 |
|
Tabla de datos |
SuperMESH3™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950 V | 22A (Tc) | 10V | 360mOhm @ 11A, 10V | 5V @ 150µA | 105 nC @ 10 V | ±30V | 3680 pF @ 100 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IXTA6N100D2HVMOSFET N-CH 1000V 6A TO263HV |
2,161 |
|
Tabla de datos |
Depletion | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 6A (Tj) | 0V | 2.2Ohm @ 3A, 0V | 4.5V @ 250µA | 95 nC @ 5 V | ±20V | 2650 pF @ 10 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263HV |
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IXTH52N65XMOSFET N-CH 650V 52A TO247 |
3,368 |
|
Tabla de datos |
Ultra X | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 52A (Tc) | 10V | 68mOhm @ 26A, 10V | 5V @ 250µA | 113 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
STW55NM50NMOSFET N-CH 500V 54A TO247-3 |
2,353 |
|
Tabla de datos |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 54A (Tc) | 10V | 54mOhm @ 27A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±25V | 5800 pF @ 50 V | - | 350W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IXTH12N90MOSFET N-CH 900V 12A TO247 |
2,662 |
|
- |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 4.5V @ 250µA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
APT1003RBLLGMOSFET N-CH 1000V 4A TO247 |
4,251 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | ±30V | 694 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
APT14F100SMOSFET N-CH 1000V 14A D3PAK |
2,267 |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 980mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
IXFH17N80QMOSFET N-CH 800V 17A TO247AD |
2,585 |
|
- |
HiPerFET™, Q Class | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 600mOhm @ 500mA, 10V | 4.5V @ 4mA | 95 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
IXTT88N15MOSFET N-CH 150V 88A TO268 |
4,123 |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 88A (Tc) | 10V | 22mOhm @ 44A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
LSIC1MO120T0120-TU1200V/120MOHM SIC MOSFET TO-263- |
4,859 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 27A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
|
|
IXTA02N450HVMOSFET N-CH 4500V 200MA TO263 |
3,925 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 256 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
|
|
IXFH12N90MOSFET N-CH 900V 12A TO247AD |
3,048 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
NTBGS002N06CPOWER MOSFET, 60 V, 2.2 M?, 211 |
4,469 |
|
Tabla de datos |
- | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta), 211A (Tc) | 10V, 12V | 2.1mOhm @ 45A, 12V | 4V @ 225µA | 62.1 nC @ 10 V | ±20V | 4620 pF @ 30 V | - | 3.7W (Ta), 178W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STY30NK90ZMOSFET N-CH 900V 26A MAX247 |
2,196 |
|
Tabla de datos |
SuperMESH™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 260mOhm @ 14A, 10V | 4.5V @ 150µA | 490 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 450W (Tc) | -65°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
|
|
IXTH12N100MOSFET N-CH 1000V 12A TO247 |
4,577 |
|
- |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
IXFH50N60XMOSFET N-CH 600V 50A TO247 |
2,292 |
|
Tabla de datos |
HiPerFET™, Ultra X | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
IXTQ30N50L2MOSFET N-CH 500V 30A TO3P |
4,734 |
|
Tabla de datos |
Linear L2™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IXFT80N65X2HV-TRLMOSFET N-CH 650V 80A TO268HV |
2,792 |
|
- |
HiPerFET™, Ultra X2 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 38mOhm @ 40A, 10V | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
|
GA06JT12-247TRANS SJT 1200V 6A TO247AB |
3,759 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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