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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTQ30N50PMOSFET N-CH 500V 30A TO3P |
3,687 |
|
Tabla de datos |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 4150 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IXFH80N10MOSFET N-CH 100V 80A TO247AD |
3,858 |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 12.5mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
|
IXFH22N55MOSFET N-CH 550V 22A TO247AD |
3,229 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
IXTC75N10MOSFET N-CH 100V 72A ISOPLUS220 |
2,573 |
|
Tabla de datos |
MegaMOS™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 20mOhm @ 37.5A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
SIHG61N65EF-GE3MOSFET N-CH 650V 64A TO247AC |
4,177 |
|
Tabla de datos |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHW61N65EF-GE3MOSFET N-CH 650V 64A TO247AD |
2,164 |
|
Tabla de datos |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
R6020FNXMOSFET N-CH 600V 20A TO220FM |
2,294 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 1mA | 65 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
APT5020SVRGMOSFET N-CH 500V 26A D3PAK |
2,976 |
|
- |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
|
IRFP350LCMOSFET N-CH 400V 16A TO247-3 |
3,000 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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|
IXFR24N80PMOSFET N-CH 800V 13A ISOPLUS247 |
4,069 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 420mOhm @ 12A, 10V | 5V @ 4mA | 105 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
IRLMS5703TRMOSFET P-CH 30V 2.3A 6-TSOP |
3,346 |
|
Tabla de datos |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.3A (Ta) | - | 200mOhm @ 1.6A, 10V | 1V @ 250µA | 11 nC @ 10 V | - | 170 pF @ 25 V | - | - | - | - | - | Surface Mount | Micro6™(SOT23-6) |
|
WNSCM80120WQWNSCM80120W/TO-247/STANDARD MARK |
2,524 |
|
- |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 42A (Ta) | 20V | 98mOhm @ 20A, 20V | 4.5V @ 6mA | 59 nC @ 20 V | +25V, -10V | 1350 pF @ 1000 V | - | 230W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
WNSCM80120RQWNSCM80120R/TO247-4L/STANDARD MA |
3,583 |
|
- |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 45A (Ta) | 20V | 98mOhm @ 20A, 20V | 4.5V @ 6mA | 59 nC @ 20 V | +25V, -10V | 1350 pF @ 1000 V | - | 270W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
IXTK128N15MOSFET N-CH 150V 128A TO264 |
2,340 |
|
- |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 128A (Tc) | 10V | 15mOhm @ 500mA, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
|
IXTK80N25MOSFET N-CH 250V 80A TO264 |
4,953 |
|
- |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 80A (Tc) | 10V | 33mOhm @ 500mA, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
IGT60R190D1SATMA1GANFET N-CH 600V 12.5A 8HSOF |
3,744 |
|
Tabla de datos |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 12.5A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 55.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
|
|
IXTR68P20TMOSFET P-CH 200V 44A ISOPLUS247 |
4,861 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 44A (Tc) | 10V | 64mOhm @ 34A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±15V | 33400 pF @ 25 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IRLMS6702TRMOSFET P-CH 20V 2.4A 6-TSOP |
2,069 |
|
Tabla de datos |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | - | 200mOhm @ 1.6A, 4.5V | 700mV @ 250µA (Min) | 8.8 nC @ 4.5 V | - | 210 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro6™(SOT23-6) |
|
IXTT60N10MOSFET N-CH 100V 60A TO268 |
2,767 |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 20mOhm @ 30A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
EPC2034GANFET N-CH 200V 48A DIE |
2,629 |
|
Tabla de datos |
eGaN® | Die | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 200 V | 48A (Ta) | 5V | 10mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8 nC @ 5 V | +6V, -4V | 950 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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