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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GA05JT12-247TRANS SJT 1200V 5A TO247AB |
3,103 |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
SMP3003-DL-1EMOSFET P-CH 75V 100A D2PAK |
4,917 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Ta) | 4V, 10V | 8mOhm @ 50A, 10V | - | 280 nC @ 10 V | ±20V | 13400 pF @ 20 V | - | 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STI30NM60NMOSFET N-CH 600V 25A I2PAK |
4,274 |
|
Tabla de datos |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 130mOhm @ 12.5A, 10V | 4V @ 250µA | 91 nC @ 10 V | ±30V | 2700 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
IRLBL1304MOSFET N-CH 40V 185A SUPER D2PAK |
4,619 |
|
Tabla de datos |
HEXFET® | Super D2-Pak | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 185A (Tc) | 4.5V, 10V | 4.5mOhm @ 110A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 7660 pF @ 25 V | - | 300W (Tc) | - | - | - | Surface Mount | SUPER D2-PAK |
|
SCT10N120HSICFET N-CH 1200V 12A H2PAK-2 |
2,273 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA | 22 nC @ 20 V | +25V, -10V | 290 pF @ 400 V | - | 150W (Tc) | -55°C ~ 200°C (TJ) | - | - | Surface Mount | H2Pak-2 |
|
IXFC26N50MOSFET N-CH 500V 23A ISOPLUS220 |
4,512 |
|
Tabla de datos |
HiPerFET™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 135 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
|
IXFC80N10MOSFET N-CH 100V 80A ISOPLUS220 |
4,738 |
|
- |
HiPerFET™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 12.5mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
PSMNR90-40SSHJMOSFET N-CH 40V 375A LFPAK88 |
2 |
|
Tabla de datos |
- | SOT-1235 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 375A (Tc) | 10V | 0.9mOhm @ 25A, 10V | 3.6V @ 1mA | 166 nC @ 10 V | ±20V | 12888 pF @ 25 V | Schottky Diode (Body) | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
|
IXFH26N55QMOSFET N-CH 550V 26A TO247AD |
2,152 |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 4.5V @ 4mA | 92 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 375W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
IRLML6402TRMOSFET P-CH 20V 3.7A SOT-23 |
3,550 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | - | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | - | 633 pF @ 10 V | - | - | - | - | - | Surface Mount | Micro3™/SOT-23 |
|
STW68N65DM6DISCRETE |
3,293 |
|
- |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 10V | 59mOhm @ 24A, 10V | 4.75V @ 250µA | 80 nC @ 10 V | ±25V | 3528 pF @ 100 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
TPH3206LSGANFET N-CH 600V 17A PQFN |
3,815 |
|
Tabla de datos |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
|
GS-065-030-2-L-TRGS-065-030-2-L-TR |
4,194 |
|
- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A (Tc) | 6V | 68mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
IPB015N04LGATMA1MOSFET N-CH 40V 120A D2PAK |
4,526 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2V @ 200µA | 346 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
GS-065-030-6-LR-TRGS-065-030-6-LR-TR |
2,048 |
|
- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 40A (Tc) | 6V | 54mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
|
UF4C120070B7S1200V/70MO,SICFET,G4,TO263-7 |
3,664 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 25.7A (Tj) | 12V | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
|
DMWSH120H90SCT7Q-13LINEAR IC |
4,174 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 38.2A (Tc) | 15V | 90mOhm @ 20A, 15V | 3.5V @ 5mA | 54.6 nC @ 15 V | +19V, -8V | 1078 pF @ 1000 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
IXFT150N17T2MOSFET N-CH 175V 150A TO268HV |
4,877 |
|
Tabla de datos |
HiPerFET™, TrenchT2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 175 V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4.5V @ 1mA | 233 nC @ 10 V | ±20V | 14600 pF @ 25 V | - | 880W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
|
STI42N65M5MOSFET N-CH 650V 33A I2PAK |
3,863 |
|
Tabla de datos |
MDmesh™ V | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4650 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
|
AUIRFS4310ZTRLMOSFET N-CH 100V 120A D2PAK |
2,683 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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