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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOT270LMOSFET N-CH 75V 21.5A/140A TO220 Alpha & Omega Semiconductor Inc. |
3,564 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.6mOhm @ 20A, 10V | 3V @ 250µA | 215 nC @ 10 V | ±20V | 10350 pF @ 37.5 V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
AOWF2606MOSFET N-CH 60V 13A/51A TO262F Alpha & Omega Semiconductor Inc. |
2,846 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 51A (Tc) | 10V | 6.5mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 4050 pF @ 30 V | - | 2.1W (Ta), 33.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262F |
|
AOI9N50MOSFET N-CH 500V 9A TO251A Alpha & Omega Semiconductor Inc. |
4,537 |
|
Tabla de datos |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 860mOhm @ 4.5A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 1160 pF @ 25 V | - | 178W (Tc) | -50°C ~ 150°C (TJ) | - | - | Through Hole | TO-251A |
|
AOK29S50LMOSFET N-CH 500V 29A TO247 Alpha & Omega Semiconductor Inc. |
3,147 |
|
Tabla de datos |
aMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6 nC @ 10 V | ±30V | 1312 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
AOW29S50MOSFET N-CH 500V 29A TO262 Alpha & Omega Semiconductor Inc. |
3,123 |
|
Tabla de datos |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6 nC @ 10 V | ±30V | 1312 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
|
AOK5N100LMOSFET N-CH 1000V 4A TO247 Alpha & Omega Semiconductor Inc. |
4,176 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOK8N80LMOSFET N-CH 800V 7.4A TO247 Alpha & Omega Semiconductor Inc. |
3,511 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7.4A (Tc) | 10V | 1.63Ohm @ 4A, 10V | 4.5V @ 250µA | 32 nC @ 10 V | ±30V | 1650 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOT11N60LMOSFET N-CH 600V 11A TO220 Alpha & Omega Semiconductor Inc. |
3,027 |
|
Tabla de datos |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±30V | 1990 pF @ 25 V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
AOWF11N60MOSFET N-CH 600V 11A TO262F Alpha & Omega Semiconductor Inc. |
2,602 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±30V | 1990 pF @ 25 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
AON1611MOSFET P-CH 20V 4A 6DFN Alpha & Omega Semiconductor Inc. |
4,930 |
|
Tabla de datos |
- | 6-PowerUFDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 58mOhm @ 4A, 4.5V | 900mV @ 250µA | 10 nC @ 4.5 V | ±8V | 550 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (1.6x1.6) |
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