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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOWF240MOSFET N-CH 40V 21A/83A Alpha & Omega Semiconductor Inc. |
2,531 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Ta), 83A (Tc) | 4.5V, 10V | 2.6mOhm @ 20A, 10V | 2.2V @ 250µA | 72 nC @ 10 V | ±20V | 3510 pF @ 20 V | - | 2.1W (Ta), 33.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF25S65MOSFET N-CH 650V 25A TO262F Alpha & Omega Semiconductor Inc. |
3,038 |
|
Tabla de datos |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4 nC @ 10 V | ±30V | 1278 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF4N60MOSFET N-CH 600V 4A TO262F Alpha & Omega Semiconductor Inc. |
2,597 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2.3Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF4S60MOSFET N-CH 600V 4A TO262F Alpha & Omega Semiconductor Inc. |
4,871 |
|
Tabla de datos |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | ±30V | 263 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF7S60MOSFET N-CH 600V 7A TO262F Alpha & Omega Semiconductor Inc. |
2,560 |
|
Tabla de datos |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
|
AOWF7S65MOSFET N-CH 650V 7A TO262F Alpha & Omega Semiconductor Inc. |
2,190 |
|
Tabla de datos |
aMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | ±30V | 434 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262F |
|
AON2401MOSFET P-CH 8V 8A 6DFN Alpha & Omega Semiconductor Inc. |
4,375 |
|
Tabla de datos |
- | 6-UDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 8A (Ta) | 1.2V, 2.5V | 22mOhm @ 8A, 2.5V | 650mV @ 250µA | 18 nC @ 4.5 V | ±5V | 1465 pF @ 4 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
|
AOI508MOSFET N-CH 30V 22A/70A TO251A Alpha & Omega Semiconductor Inc. |
3,036 |
|
Tabla de datos |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.2V @ 250µA | 49 nC @ 10 V | ±20V | 2010 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251A |
|
AOK40N30LMOSFET N-CH 300V 40A TO247 Alpha & Omega Semiconductor Inc. |
4,687 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 20A, 10V | 4.1V @ 250µA | 72 nC @ 10 V | ±30V | 3270 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
AOT2608LMOSFET N-CH 60V 11A/72A TO220 Alpha & Omega Semiconductor Inc. |
3,325 |
|
Tabla de datos |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 72A (Tc) | 10V | 8mOhm @ 20A, 10V | 3.6V @ 250µA | 55 nC @ 10 V | ±20V | 2995 pF @ 30 V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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