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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH5255TRPBFMOSFET N-CH 25V 15A/51A PQFN International Rectifier |
4,000 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 15A (Ta), 51A (Tc) | - | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5 nC @ 10 V | ±20V | 988 pF @ 13 V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRF7805TRPBFPFET, 30V, 0.011OHM, 1OXIDE SEMI International Rectifier |
1,900 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFR3711TRLPBFHEXFET N-CHANNEL POWER MOSFET International Rectifier |
1,417 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
AUIRFR120ZPFET, 8.7A I(D), 100V, 0.19OHM, International Rectifier |
4,974 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 25µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
IRFU1010ZPBFMOSFET N-CH 55V 42A IPAK International Rectifier |
4,825 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
AUIRLR024ZAUTOMOTIVE HEXFET N-CHANNEL International Rectifier |
11,095 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
AUIRLL024NTR-IRAUTOMOTIVE POWER MOSFET International Rectifier |
3,529 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6 nC @ 5 V | ±16V | 510 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRF8327STRPBFMOSFET N-CH 30V 14A/60A DIRECTFT International Rectifier |
4,538 |
|
Tabla de datos |
- | DirectFET™ Isometric SQ | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14 nC @ 4.5 V | ±20V | 1430 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
|
|
AUIRLR024NTRLMOSFET N-CH 55V 17A DPAK International Rectifier |
75,828 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
|
AUIRLR024NAUTOMOTIVE HEXFET N-CHANNEL International Rectifier |
11,025 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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