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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF1405ZLMOSFET N-CH 55V 150A TO262 International Rectifier |
1,832 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
AUIRF7675M2TRAUIRF7675M2 - 120V-300V N-CHANNE International Rectifier |
2,516 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric M2 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.4A (Ta), 18A (Tc) | 10V | 56mOhm @ 11A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 2.7W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M2 |
|
AUIRL1404ZSMOSFET N-CH 40V 160A D2PAK International Rectifier |
9,408 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
AUIRL1404ZMOSFET N-CH 40V 160A TO220 International Rectifier |
10,859 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
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IRFSL7537PBFMOSFET N-CH 60V 173A TO262 International Rectifier |
800 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF3703PBFIRF3703 - 12V-300V N-CHANNEL POW International Rectifier |
15,791 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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IRF2907ZPBFIRF2907 - 12V-300V N-CHANNEL POW International Rectifier |
18,857 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IRFSL7730PBFIRFSL7730 - 12V-300V N-CHANNEL P International Rectifier |
899 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
AUIRL7736M2TRMOSFET N-CH 40V 179A DIRECTFET International Rectifier |
13,183 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric M4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 179A (Tc) | 4.5V, 10V | 3mOhm @ 67A, 10V | 2.5V @ 150µA | 78 nC @ 4.5 V | ±16V | 5055 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
|
|
AUIRL7766M2TRMOSFET N-CH 100V 10A DIRECTFET International Rectifier |
37,084 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric M4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 31A, 10V | 2.5V @ 150µA | 66 nC @ 4.5 V | ±16V | 5305 pF @ 25 V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
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