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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6894MTR1PBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
2,961 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39 nC @ 4.5 V | ±16V | 4160 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6898MTR1PBFMOSFET N-CH 25V 35A DIRECTFET Infineon Technologies |
3,008 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | 2.1V @ 100µA | 62 nC @ 4.5 V | ±16V | 5435 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRFB812PBFMOSFET N CH 500V 3.6A TO220AB Infineon Technologies |
4,155 |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±20V | 810 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFI4410ZGPBFMOSFET N-CH 100V 43A TO220AB FP Infineon Technologies |
3,749 |
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Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 10V | 9.3mOhm @ 26A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±30V | 4910 pF @ 50 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRFR812TRPBFMOSFET N-CH 500V 3.6A DPAK Infineon Technologies |
4,204 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±20V | 810 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRFR812PBFMOSFET N-CH 500V 3.6A DPAK Infineon Technologies |
3,681 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±20V | 810 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR825PBFMOSFET N-CH 500V 6A DPAK Infineon Technologies |
3,797 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±20V | 1346 pF @ 25 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFH7107TRPBFMOSFET N-CH 75V 14A/75A 8PQFN Infineon Technologies |
2,939 |
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Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72 nC @ 10 V | ±20V | 3110 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFSL4510PBFMOSFET N-CH 100V 61A TO262 Infineon Technologies |
3,351 |
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Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 61A (Tc) | 10V | 13.9mOhm @ 37A, 10V | 4V @ 100µA | 87 nC @ 10 V | ±20V | 3180 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFR4510PBFMOSFET N CH 100V 56A DPAK Infineon Technologies |
3,425 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81 nC @ 10 V | ±20V | 3031 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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