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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9392TRPBFMOSFET P-CH 30V 9.8A 8SO Infineon Technologies |
3,027 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14 nC @ 4.5 V | ±25V | 1270 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFB3607GPBFMOSFET N-CH 75V 80A TO220AB Infineon Technologies |
4,038 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFH5104TRPBFMOSFET N-CH 40V 24A/100A PQFN Infineon Technologies |
3,110 |
|
Tabla de datos |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80 nC @ 10 V | ±20V | 3120 pF @ 25 V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRFH5204TRPBFMOSFET N-CH 40V 22A/100A PQFN Infineon Technologies |
4,436 |
|
Tabla de datos |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65 nC @ 10 V | ±20V | 2460 pF @ 25 V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
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IRFH5220TRPBFMOSFET N-CH 200V 3.8A/20A PQFN Infineon Technologies |
4,847 |
|
Tabla de datos |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30 nC @ 10 V | ±20V | 1380 pF @ 50 V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
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IRL6342PBFMOSFET N-CH 30V 9.9A 8SO Infineon Technologies |
2,927 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.9A (Ta) | 2.5V, 4.5V | 14.6mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11 nC @ 4.5 V | ±12V | 1025 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF3610SPBFMOSFET N-CH 100V 103A D2PAK Infineon Technologies |
2,620 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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BSF030NE2LQXUMA1MOSFET N-CH 25V 24A/75A 2WDSON Infineon Technologies |
4,667 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 75A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 23 nC @ 10 V | ±20V | 1700 pF @ 12 V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
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IPB042N10N3GE8187ATMA1MOSFET N-CH 100V 100A D2PAK Infineon Technologies |
3,984 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB180N03S4LH0ATMA1MOSFET N-CH 30V 180A TO263-7 Infineon Technologies |
3,917 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 200µA | 300 nC @ 10 V | ±16V | 23000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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