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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9Z34NSPBFMOSFET P-CH 55V 19A D2PAK Infineon Technologies |
4,863 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF3305PBFMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
2,512 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3650 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRFB4215PBFMOSFET N-CH 60V 115A TO220AB Infineon Technologies |
4,977 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRF3315SPBFMOSFET N-CH 150V 21A D2PAK Infineon Technologies |
3,342 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL3502SPBFMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
2,782 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | ±10V | 4700 pF @ 15 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
64-2092PBFMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
4,886 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF2807SPBFMOSFET N-CH 75V 82A D2PAK Infineon Technologies |
2,081 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLBA1304PPBFMOSFET N-CH 40V 185A SUPER-220 Infineon Technologies |
2,751 |
|
Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 7660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
IRLR3714ZPBFMOSFET N-CH 20V 37A DPAK Infineon Technologies |
2,512 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1 nC @ 4.5 V | ±20V | 560 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRFR3704ZPBFMOSFET N-CH 20V 60A DPAK Infineon Technologies |
2,308 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 8.4mOhm @ 15A, 10V | 2.55V @ 250µA | 14 nC @ 4.5 V | ±20V | 1190 pF @ 10 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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