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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSO201SPNTMA1MOSFET P-CH 20V 14.9A 8DSO Infineon Technologies |
2,667 |
|
Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 14.9A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 128 nC @ 4.5 V | ±12V | 5962 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
SPI11N60C3XKSA1MOSFET N-CH 650V 11A TO262-3 Infineon Technologies |
3,363 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
SPP80P06PBKSA1MOSFET P-CH 60V 80A TO220-3 Infineon Technologies |
3,815 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173 nC @ 10 V | ±20V | 5033 pF @ 25 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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SPP02N80C3XKSA1MOSFET N-CH 800V 2A TO220-3 Infineon Technologies |
3,986 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
SPW12N50C3FKSA1MOSFET N-CH 560V 11.6A TO247-3 Infineon Technologies |
3,483 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
|
SPP80N03S2L05AKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
3,458 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 55A, 10V | 2V @ 110µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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SPW21N50C3FKSA1MOSFET N-CH 560V 21A TO247-3 Infineon Technologies |
4,843 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IPU09N03LA GMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
2,839 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
|
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IPP03N03LAMOSFET N-CH 25V 80A TO220-3 Infineon Technologies |
3,668 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tape & Box (TB) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 3mOhm @ 55A, 10V | 2V @ 100µA | 57 nC @ 5 V | ±20V | 7027 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPU06N03LAGXKMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
4,820 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | P-TO251-3-1 |
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