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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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SPP08P06PBKSA1MOSFET P-CH 60V 8.8A TO220-3 Infineon Technologies |
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Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Tc) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPP18P06PHKSA1MOSFET P-CH 60V 18.7A TO220-3 Infineon Technologies |
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Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18.7A (Ta) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 81.1W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF1302SMOSFET N-CH 20V 174A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 174A (Tc) | 10V | 4mOhm @ 104A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFU3410MOSFET N-CH 100V 31A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRLU7833MOSFET N-CH 30V 140A I-PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRFR3711ZMOSFET N-CH 20V 93A DPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2160 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF4104SMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFZ44VZMOSFET N-CH 60V 57A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ44VZSMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF2807ZSMOSFET N-CH 75V 75A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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