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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPA15N60C3XKSA1MOSFET N-CH 650V 15A TO220-FP Infineon Technologies |
211 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IPP016N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
482 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 35A (Ta), 196A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.8V @ 267µA | 255 nC @ 10 V | ±20V | 12000 pF @ 40 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP014N06NF2SAKMA2TRENCH 40<-<100V PG-TO220-3 Infineon Technologies |
1,000 |
|
Tabla de datos |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.3V @ 246µA | 305 nC @ 10 V | ±20V | 13800 pF @ 30 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
|
IPB65R190CFDAATMA1MOSFET N-CH 650V 17.5A D2PAK Infineon Technologies |
1,182 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
IPF024N10NF2SATMA1TRENCH >=100V Infineon Technologies |
729 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 227A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
|
|
IPB026N10NF2SATMA1TRENCH >=100V Infineon Technologies |
2,024 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 162A (Tc) | 6V, 10V | 2.65mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB016N06L3GATMA1MOSFET N-CH 60V 180A TO263-7 Infineon Technologies |
9,298 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 196µA | 166 nC @ 4.5 V | ±20V | 28000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
|
SPB21N50C3ATMA1MOSFET N-CH 560V 21A TO263-3 Infineon Technologies |
2,683 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPB65R150CFDATMA2MOSFET N-CH 650V 22.4A TO263-3 Infineon Technologies |
1,327 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPF017N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
1,455 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 259A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
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