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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL65R195C7AUMA1MOSFET N-CH 650V 12A 4VSON Infineon Technologies |
1,137 |
|
Tabla de datos |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 195mOhm @ 2.9A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPP019N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
896 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Ta), 191A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPB80N06S2L06ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
891 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRFB3207PBFMOSFET N-CH 75V 170A TO220AB Infineon Technologies |
930 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPB039N10N3GATMA1MOSFET N-CH 100V 160A TO263-7 Infineon Technologies |
29,577 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
|
IRFB3206GPBFMOSFET N-CH 60V 120A TO220AB Infineon Technologies |
522 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SPA11N80C3XKSA2MOSFET N-CH 800V 11A TO220-3 Infineon Technologies |
189 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP65R190CFDXKSA2MOSFET N-CH 650V 17.5A TO220-3 Infineon Technologies |
1,391 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPL60R125P7AUMA1MOSFET N-CH 600V 27A 4VSON Infineon Technologies |
5,365 |
|
Tabla de datos |
CoolMOS™ P7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 125mOhm @ 8.2A, 10V | 4V @ 410µA | 36 nC @ 10 V | ±20V | 1544 pF @ 400 V | - | 111W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
|
IRF3808STRLPBFMOSFET N-CH 75V 106A D2PAK Infineon Technologies |
2,847 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 5310 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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