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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    GWM180-004X2-SMD

    GWM180-004X2-SMD

    MOSFET 6N-CH 40V 180A ISOPLUS

    IXYS

    3,887
    RFQ

    -

    - 17-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 40V 180A 2.5mOhm @ 100A, 10V 4.5V @ 1mA 110nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    VWM270-0075X2

    VWM270-0075X2

    MOSFET 6N-CH 75V 270A V2-PAK

    IXYS

    4,526
    RFQ

    -

    - V2-PAK Box Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 270A 2.1mOhm @ 100A, 10V 4V @ 500µA 360nC @ 10V - - -40°C ~ 175°C (TJ) - - Chassis Mount V2-PAK
    MTM763250LBF

    MTM763250LBF

    MOSFET N/P-CH 20V 1.7A WSMINI6

    Panasonic Electronic Components

    2,970
    RFQ
    MTM763250LBF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.7A, 1A 120mOhm @ 1A, 4V 1.3V @ 1mA - 280pF @ 10V 700mW 150°C (TJ) - - Surface Mount WSMini6-F1-B
    APTMC60TL11CT3AG

    APTMC60TL11CT3AG

    MOSFET 4N-CH 1200V 28A SP3

    Microchip Technology

    2,274
    RFQ
    APTMC60TL11CT3AG

    Tabla de datos

    - SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 28A (Tc) 98mOhm @ 20A, 20V 2.2V @ 1mA 49nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    DMN1033UCB4-7

    DMN1033UCB4-7

    MOSFET 2N-CH U-WLB1818-4

    Diodes Incorporated

    3,462
    RFQ

    -

    - 4-UFBGA, WLBGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate - - - - 37nC @ 4.5V - 1.45W -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1818-4
    UPA2690T1R-E2-AX

    UPA2690T1R-E2-AX

    MOSFET N/P-CH 20V 4A/3A 6HUSON

    Renesas Electronics Corporation

    2,487
    RFQ
    UPA2690T1R-E2-AX

    Tabla de datos

    - 6-WFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate, 2.5V Drive 20V 4A, 3A 42mOhm @ 2A, 4.5V - 4.5nC @ 10V 330pF @ 10V 2.3W 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
    UPA2660T1R-E2-AX

    UPA2660T1R-E2-AX

    MOSFET 2N-CH 20V 4A 6HUSON

    Renesas Electronics Corporation

    3,048
    RFQ
    UPA2660T1R-E2-AX

    Tabla de datos

    - 6-WFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive 20V 4A 62mOhm @ 2A, 4.5V - 4.5nC @ 10V 330pF @ 10V 2.3W 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
    RJM0306JSP-01#J0

    RJM0306JSP-01#J0

    MOSFET 2N/2P-CH 30V 3.5A 8SOP

    Renesas Electronics Corporation

    2,781
    RFQ
    RJM0306JSP-01#J0

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate, 4V Drive 30V 3.5A 65mOhm @ 2A, 10V - 5nC @ 10V 290pF @ 10V 2.2W - - - Surface Mount 8-SOP
    SI4618DY-T1-GE3

    SI4618DY-T1-GE3

    MOSFET 2N-CH 30V 8A/15.2A 8SOIC

    Vishay Siliconix

    2,760
    RFQ
    SI4618DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 30V 8A, 15.2A 17mOhm @ 8A, 10V 2.5V @ 1mA 44nC @ 10V 1535pF @ 15V 1.98W, 4.16W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI5997DU-T1-GE3

    SI5997DU-T1-GE3

    MOSFET 2P-CH 30V 6A PPAK CHIPFET

    Vishay Siliconix

    3,459
    RFQ
    SI5997DU-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® ChipFET™ Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 6A 54mOhm @ 3A, 10V 2.4V @ 250µA 14.5nC @ 10V 430pF @ 15V 10.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® ChipFet Dual
    SI7270DP-T1-GE3

    SI7270DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO8

    Vishay Siliconix

    4,013
    RFQ
    SI7270DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.8V @ 250µA 21nC @ 10V 900pF @ 15V 17.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SIA915DJ-T1-GE3

    SIA915DJ-T1-GE3

    MOSFET 2P-CH 30V 4.5A PPAK8X8

    Vishay Siliconix

    4,687
    RFQ
    SIA915DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 87mOhm @ 2.9A, 10V 2.2V @ 250µA 9nC @ 10V 275pF @ 15V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIA920DJ-T1-GE3

    SIA920DJ-T1-GE3

    MOSFET 2N-CH 8V 4.5A PPAK8X8

    Vishay Siliconix

    3,393
    RFQ
    SIA920DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 8V 4.5A 27mOhm @ 5.3A, 4.5V 700mV @ 250µA 7.5nC @ 4.5V 470pF @ 4V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SQJ962EP-T1-GE3

    SQJ962EP-T1-GE3

    MOSFET 2N-CH 60V 8A PPAK SO8

    Vishay Siliconix

    3,909
    RFQ
    SQJ962EP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 8A 60mOhm @ 4.3A, 10V 2.5V @ 250µA 14nC @ 10V 475pF @ 25V 25W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    IRF3575DTRPBF

    IRF3575DTRPBF

    MOSFET 2N-CH 25V 303A 32QFN

    Infineon Technologies

    4,363
    RFQ
    IRF3575DTRPBF

    Tabla de datos

    - 32-PowerWFQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 303A (Tc) - - - - - - - - Surface Mount 32-PQFN (6x6)
    IRFH4255DTRPBF

    IRFH4255DTRPBF

    MOSFET 2N-CH 25V 64A/105A PQFN

    Infineon Technologies

    2,085
    RFQ
    IRFH4255DTRPBF

    Tabla de datos

    HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 64A, 105A 3.2mOhm @ 30A, 10V 2.1V @ 35µA 15nC @ 4.5V 1314pF @ 13V 31W, 38W -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    SIZ914DT-T1-GE3

    SIZ914DT-T1-GE3

    MOSFET 2N-CH 30V 16A 8POWERPAIR

    Vishay Siliconix

    4,342
    RFQ
    SIZ914DT-T1-GE3

    Tabla de datos

    TrenchFET® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 16A, 40A 6.4mOhm @ 19A, 10V 2.4V @ 250µA 26nC @ 10V 1208pF @ 15V 22.7W, 100W -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair®
    FDZ1416NZ

    FDZ1416NZ

    MOSFET 2N-CH 4WLCSP

    onsemi

    4,453
    RFQ
    FDZ1416NZ

    Tabla de datos

    PowerTrench® 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - - 1.3V @ 250µA 17nC @ 4.5V - 500mW -55°C ~ 150°C (TJ) - - Surface Mount 4-WLCSP (1.6x1.4)
    IRFHE4250DTRPBF

    IRFHE4250DTRPBF

    MOSFET 2N-CH 25V 86A/303A 32QFN

    Infineon Technologies

    4,239
    RFQ
    IRFHE4250DTRPBF

    Tabla de datos

    FASTIRFET™ 32-PowerWFQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 86A, 303A 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V 2.1V @ 35µA 20nC @ 4.5V 1735pF @ 13V 156W -55°C ~ 150°C (TJ) - - Surface Mount 32-PQFN (6x6)
    IRL6297SDTRPBF

    IRL6297SDTRPBF

    MOSFET 2N-CH 20V 15A DIRECTFETSA

    Infineon Technologies

    2,837
    RFQ
    IRL6297SDTRPBF

    Tabla de datos

    HEXFET® DirectFET™ Isometric SA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 15A 4.9mOhm @ 15A, 4.5V 1.1V @ 35µA 54nC @ 10V 2245pF @ 10V 1.7W -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SA
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