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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SLA5085

    SLA5085

    MOSFET 5N-CH 60V 10A 12SIP

    Sanken Electric USA Inc.

    3,970
    RFQ
    SLA5085

    Tabla de datos

    - 12-SIP Exposed Tab Tube Active MOSFET (Metal Oxide) 5 N-Channel, Common Source Logic Level Gate 60V 10A 220mOhm @ 3A, 4V 2V @ 250µA - 320pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    APTC90TAM60TPG

    APTC90TAM60TPG

    MOSFET 6N-CH 900V 59A SP6-P

    Microsemi Corporation

    3,202
    RFQ

    -

    CoolMOS™ SP6 Tray Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 900V 59A 60mOhm @ 52A, 10V 3.5V @ 6mA 540nC @ 10V 13600pF @ 100V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    SSM6L11TU(TE85L,F)

    SSM6L11TU(TE85L,F)

    MOSFET N/P-CH 20V 0.5A UF6

    Toshiba Semiconductor and Storage

    2,100
    RFQ

    -

    - 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 500mA 145mOhm @ 250MA, 4V 1.1V @ 100µA - 268pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
    JAN2N7334

    JAN2N7334

    MOSFET 4N-CH 100V 1A MO-036AB

    Microsemi Corporation

    4,896
    RFQ
    JAN2N7334

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Active MOSFET (Metal Oxide) 4 N-Channel - 100V 1A 700mOhm @ 600mA, 10V 4V @ 250µA 60nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/597 Through Hole MO-036AB
    JAN2N7335

    JAN2N7335

    MOSFET 4P-CH 100V 0.75A

    Microsemi Corporation

    4,178
    RFQ
    JAN2N7335

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole -
    JANTX2N7335

    JANTX2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    4,201
    RFQ
    JANTX2N7335

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole MO-036AB
    JANTXV2N7334

    JANTXV2N7334

    MOSFET 4N-CH 100V 1A MO-036AB

    Microsemi Corporation

    3,471
    RFQ
    JANTXV2N7334

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Active MOSFET (Metal Oxide) 4 N-Channel - 100V 1A 700mOhm @ 600mA, 10V 4V @ 250µA 60nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/597 Through Hole MO-036AB
    JANTXV2N7335

    JANTXV2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    2,751
    RFQ
    JANTXV2N7335

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole MO-036AB
    2N7335

    2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    4,344
    RFQ
    2N7335

    Tabla de datos

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) - - Through Hole MO-036AB
    AON6810

    AON6810

    MOSFET 2N-CH 30V 25A 8DFN

    Alpha & Omega Semiconductor Inc.

    2,464
    RFQ
    AON6810

    Tabla de datos

    - 8-SMD, Flat Leads Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 25A 4.4mOhm @ 20A, 10V 2.2V @ 250µA 34nC @ 10V 1720pF @ 15V 4.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (5x6)
    AON6812

    AON6812

    MOSFET 2N-CH 30V 27A 8DFN

    Alpha & Omega Semiconductor Inc.

    3,290
    RFQ
    AON6812

    Tabla de datos

    - 8-SMD, Flat Leads Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 27A 4mOhm @ 20A, 10V 2.2V @ 250µA 34nC @ 10V 1720pF @ 15V 4.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (5x6)
    GMM3X100-01X1-SMD

    GMM3X100-01X1-SMD

    MOSFET 6N-CH 100V 90A 24SMD

    IXYS

    4,059
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 90A - 4.5V @ 1mA 90nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X100-01X1-SMDSAM

    GMM3X100-01X1-SMDSAM

    MOSFET 6N-CH 100V 90A 24SMD

    IXYS

    2,424
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 90A - 4.5V @ 1mA 90nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X120-0075X2-SMDSAM

    GMM3X120-0075X2-SMDSAM

    MOSFET 6N-CH 75V 110A 24SMD

    IXYS

    3,946
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 110A - 4V @ 1mA 115nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X160-0055X2-SMD

    GMM3X160-0055X2-SMD

    MOSFET 6N-CH 55V 150A 24SMD

    IXYS

    4,455
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 55V 150A - 4V @ 1mA 110nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X160-0055X2-SMDSAM

    GMM3X160-0055X2-SMDSAM

    MOSFET 6N-CH 55V 150A 24SMD

    IXYS

    2,437
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 55V 150A - 4V @ 1mA 110nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X180-004X2-SMD

    GMM3X180-004X2-SMD

    MOSFET 6N-CH 40V 180A 24SMD

    IXYS

    2,823
    RFQ

    -

    - 24-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 40V 180A - 4.5V @ 1mA 110nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount 24-SMD
    GMM3X60-015X2-SMD

    GMM3X60-015X2-SMD

    MOSFET 6N-CH 150V 50A ISOPLUS

    IXYS

    4,803
    RFQ
    GMM3X60-015X2-SMD

    Tabla de datos

    - ISOPLUS-DIL™ Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 150V 50A 24mOhm @ 38A, 10V 4.5V @ 1mA 97nC @ 10V 5800pF @ 25V - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GMM3X60-015X2-SMDSAM

    GMM3X60-015X2-SMDSAM

    MOSFET 6N-CH 150V 50A ISOPLUS

    IXYS

    4,542
    RFQ

    -

    - ISOPLUS-DIL™ Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 150V 50A 24mOhm @ 38A, 10V 4.5V @ 1mA 97nC @ 10V 5800pF @ 25V - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GWM180-004X2-SL

    GWM180-004X2-SL

    MOSFET 6N-CH 40V 180A ISOPLUS

    IXYS

    3,302
    RFQ

    -

    - 17-SMD, Flat Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 40V 180A 2.5mOhm @ 100A, 10V 4.5V @ 1mA 110nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
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