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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTM120H29FG

    APTM120H29FG

    MOSFET 4N-CH 1200V 34A SP6

    Microchip Technology

    3,684
    RFQ
    APTM120H29FG

    Tabla de datos

    POWER MOS 7® SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100TA35SCTPG

    APTM100TA35SCTPG

    MOSFET 6N-CH 1000V 22A SP6-P

    Microchip Technology

    2,400
    RFQ
    APTM100TA35SCTPG

    Tabla de datos

    POWER MOS 7® Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    CAS100H12AM1

    CAS100H12AM1

    MOSFET 2N-CH 1200V 168A MODULE

    Wolfspeed, Inc.

    4,952
    RFQ

    -

    Z-FET™ Module Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 168A 20mOhm @ 20A, 20V 3.1V @ 50mA - 9500pF @ 800V 568W - - - Chassis Mount Module
    CAS110M12BM2

    CAS110M12BM2

    SIC 1200V 110A

    Wolfspeed, Inc.

    3,554
    RFQ
    CAS110M12BM2

    Tabla de datos

    - Module Bulk Not For New Designs Silicon Carbide (SiC) - - 1200V (1.2kV) 110A - - - - - - - - Chassis Mount -
    MSCSM120HM16CT3AG

    MSCSM120HM16CT3AG

    MOSFET 4N-CH 1200V 173A SP3F

    Microchip Technology

    3,919
    RFQ
    MSCSM120HM16CT3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    QJD1210SA1

    QJD1210SA1

    MOSFET 2N-CH 1200V 100A MODULE

    Powerex Inc.

    3,929
    RFQ
    QJD1210SA1

    Tabla de datos

    - Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 520W -40°C ~ 150°C (TJ) - - Chassis Mount Module
    QJD1210SB1

    QJD1210SB1

    SIC 1200V 10A MOD

    Powerex Inc.

    2,891
    RFQ

    -

    * - Bulk Discontinued at Digi-Key Silicon Carbide (SiC) - - - - - - - - - - - - - -
    APTC60TAM21SCTPAG

    APTC60TAM21SCTPAG

    MOSFET 6N-CH 600V 116A SP6-P

    Microchip Technology

    3,667
    RFQ
    APTC60TAM21SCTPAG

    Tabla de datos

    CoolMOS™ Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    CCS050M12CM2

    CCS050M12CM2

    MOSFET 6N-CH 1200V 87A MODULE

    Wolfspeed, Inc.

    4,661
    RFQ

    -

    Z-FET™ Z-Rec™ Module Bulk Obsolete Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 87A (Tc) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2810pF @ 800V 337W 150°C (TJ) - - Chassis Mount Module
    WAS110M12BM2

    WAS110M12BM2

    RF MOSFET 1200V

    Wolfspeed, Inc.

    4,301
    RFQ

    -

    - - Bulk Not For New Designs - - - - - - - - - - - - - - -
    QJD1210SA2

    QJD1210SA2

    MOSFET 2N-CH 1200V 100A MODULE

    Powerex Inc.

    2,524
    RFQ
    QJD1210SA2

    Tabla de datos

    - Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 415W -40°C ~ 150°C (TJ) - - Chassis Mount Module
    APTMC170AM60CT1AG

    APTMC170AM60CT1AG

    MOSFET 2N-CH 1700V 50A SP1

    Microchip Technology

    3,720
    RFQ
    APTMC170AM60CT1AG

    Tabla de datos

    - SP1 Bulk Obsolete Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 50A (Tc) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V 350W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    MSCSM70HM05CAG

    MSCSM70HM05CAG

    SIC MOSFET

    Microchip Technology

    3,028
    RFQ

    -

    - - Bulk Active - - - - - - - - - - - - - - -
    MSCSM70TAM10CTPAG

    MSCSM70TAM10CTPAG

    MOSFET 6N-CH 700V 238A SP6-P

    Microchip Technology

    4,978
    RFQ
    MSCSM70TAM10CTPAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
    MSCSM70AM025CT6AG

    MSCSM70AM025CT6AG

    MOSFET 700V 538A SP6C

    Microchip Technology

    4,805
    RFQ
    MSCSM70AM025CT6AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount SP6C
    MSCSM120TAM16CTPAG

    MSCSM120TAM16CTPAG

    MOSFET 6N-CH 1200V 171A SP6-P

    Microchip Technology

    4,092
    RFQ
    MSCSM120TAM16CTPAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
    MSCSM120HM083CAG

    MSCSM120HM083CAG

    SIC MOSFET

    Microchip Technology

    4,043
    RFQ

    -

    - - Bulk Active - - - - - - - - - - - - - - -
    MSCSM120AM042CT6AG

    MSCSM120AM042CT6AG

    MOSFET 2N-CH 1200V 495A SP6C

    Microchip Technology

    2,938
    RFQ
    MSCSM120AM042CT6AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM70AM025CT6LIAG

    MSCSM70AM025CT6LIAG

    MOSFET 2N-CH 700V 689A SP6C LI

    Microchip Technology

    3,561
    RFQ
    MSCSM70AM025CT6LIAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N-Channel - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA (Typ) 1290nC @ 20V 27000pF @ 700V 1882W (Tc) - - - Chassis Mount SP6C LI
    QJD1210010

    QJD1210010

    MOSFET 2N-CH 1200V 100A MODULE

    Powerex Inc.

    3,994
    RFQ
    QJD1210010

    Tabla de datos

    - Module Bulk Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 1080W -40°C ~ 175°C (TJ) - - Chassis Mount Module
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