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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTM20DUM04G

    APTM20DUM04G

    MOSFET 2N-CH 200V 372A SP6

    Microchip Technology

    2,320
    RFQ
    APTM20DUM04G

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM19FG

    APTM50AM19FG

    MOSFET 2N-CH 500V 163A SP6

    Microchip Technology

    4,517
    RFQ
    APTM50AM19FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 163A 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492nC @ 10V 22400pF @ 25V 1136W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    VMM650-01F

    VMM650-01F

    MOSFET 2N-CH 100V 680A Y3-LI

    IXYS

    4,621
    RFQ

    -

    HiPerFET™ Y3-Li Box Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 680A 2.2mOhm @ 500A, 10V 4V @ 30mA 1440nC @ 10V - - -40°C ~ 150°C (TJ) - - Chassis Mount Y3-Li
    APTM10DUM02G

    APTM10DUM02G

    MOSFET 2N-CH 100V 495A SP6

    Microchip Technology

    4,552
    RFQ
    APTM10DUM02G

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A20DG

    APTM120A20DG

    MOSFET 2N-CH 1200V 50A SP6

    Microchip Technology

    3,899
    RFQ
    APTM120A20DG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50HM38FG

    APTM50HM38FG

    MOSFET 4N-CH 500V 90A SP6

    Microchip Technology

    3,840
    RFQ
    APTM50HM38FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A20SG

    APTM120A20SG

    MOSFET 2N-CH 1200V 50A SP6

    Microchip Technology

    2,502
    RFQ
    APTM120A20SG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    MSCC60VRM45TAPG

    MSCC60VRM45TAPG

    MOSFET 600V 40A SP6-P

    Microchip Technology

    4,992
    RFQ
    MSCC60VRM45TAPG

    Tabla de datos

    - Module Tube Active - - - 600V 40A (Tc) - - - - - - - - Chassis Mount SP6-P
    APTM120DU15G

    APTM120DU15G

    MOSFET 2N-CH 1200V 60A SP6

    Microchip Technology

    3,452
    RFQ
    APTM120DU15G

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM10AM02FG

    APTM10AM02FG

    MOSFET 2N-CH 100V 495A SP6

    Microchip Technology

    3,284
    RFQ
    APTM10AM02FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM20HM08FG

    APTM20HM08FG

    MOSFET 4N-CH 200V 208A SP6

    Microchip Technology

    4,065
    RFQ
    APTM20HM08FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM24SCG

    APTM50AM24SCG

    MOSFET 2N-CH 500V 150A SP6

    Microchip Technology

    2,471
    RFQ
    APTM50AM24SCG

    Tabla de datos

    - SP6 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTC60TAM24TPG

    APTC60TAM24TPG

    MOSFET 6N-CH 600V 95A SP6-P

    Microchip Technology

    4,163
    RFQ
    APTC60TAM24TPG

    Tabla de datos

    CoolMOS™ SP6 Tray Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTM10HM05FG

    APTM10HM05FG

    MOSFET 4N-CH 100V 278A SP6

    Microchip Technology

    2,399
    RFQ
    APTM10HM05FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 278A 5mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM17FG

    APTM50AM17FG

    MOSFET 2N-CH 500V 180A SP6

    Microchip Technology

    3,510
    RFQ
    APTM50AM17FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 180A 20mOhm @ 90A, 10V 5V @ 10mA 560nC @ 10V 28000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50HM35FG

    APTM50HM35FG

    MOSFET 4N-CH 500V 99A SP6

    Microchip Technology

    2,349
    RFQ
    APTM50HM35FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100AM90FG

    APTM100AM90FG

    MOSFET 2N-CH 1000V 78A SP6

    Microchip Technology

    2,218
    RFQ
    APTM100AM90FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 78A 105mOhm @ 39A, 10V 5V @ 10mA 744nC @ 10V 20700pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A15FG

    APTM120A15FG

    MOSFET 2N-CH 1200V 60A SP6

    Microchip Technology

    2,043
    RFQ
    APTM120A15FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100H18FG

    APTM100H18FG

    MOSFET 4N-CH 1000V 43A SP6

    Microchip Technology

    4,561
    RFQ
    APTM100H18FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    CAB5R0A23GM4T

    CAB5R0A23GM4T

    MOSFET 2N-CH 2300V 150A

    Wolfspeed, Inc.

    2,673
    RFQ
    CAB5R0A23GM4T

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 7mOhm @ 240A, 15V 4V @ 114mA 880nC @ 15V 36600pF @ 1.5kV 710W -40°C ~ 150°C (TJ) - - Chassis Mount -
    Total 5737 Record«Prev1... 234235236237238239240241...287Next»
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