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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SIA519EDJ-T1-GE3

    SIA519EDJ-T1-GE3

    MOSFET N/P-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    293,244
    RFQ
    SIA519EDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 4.5A 40mOhm @ 4.2A, 4.5V 1.4V @ 250µA 12nC @ 10V 350pF @ 10V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIA906EDJ-T1-GE3

    SIA906EDJ-T1-GE3

    MOSFET 2N-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    112,749
    RFQ
    SIA906EDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46mOhm @ 3.9A, 4.5V 1.4V @ 250µA 12nC @ 10V 350pF @ 10V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    QS6M3TR

    QS6M3TR

    MOSFET N/P-CH 30V/20V 1.5A TSMT6

    Rohm Semiconductor

    11,938
    RFQ
    QS6M3TR

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 1.5A 230mOhm @ 1.5A, 4.5V 1.5V @ 1mA 1.6nC @ 4.5V 80pF @ 10V 1.25W 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
    BSL308PEH6327XTSA1

    BSL308PEH6327XTSA1

    MOSFET 2P-CH 30V 2A TSOP6-6

    Infineon Technologies

    14,492
    RFQ
    BSL308PEH6327XTSA1

    Tabla de datos

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 2A 80mOhm @ 2A, 10V 1V @ 11µA 5nC @ 10V 500pF @ 15V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TSOP6-6
    DMT3020LSDQ-13

    DMT3020LSDQ-13

    MOSFET 2N-CH 30V 16A 8SO

    Diodes Incorporated

    17,003
    RFQ
    DMT3020LSDQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 16A (Tc) 20mOhm @ 9A, 10V 2.5V @ 250µA 7nC @ 10V 393pF @ 15V 1W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    BSL308CH6327XTSA1

    BSL308CH6327XTSA1

    MOSFET N/P-CH 30V 2.3A TSOP6-6

    Infineon Technologies

    13,856
    RFQ
    BSL308CH6327XTSA1

    Tabla de datos

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate, 4.5V Drive 30V 2.3A, 2A 57mOhm @ 2.3A, 10V 2V @ 11µA 1.5nC @ 10V 275pF @ 15V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TSOP6-6
    DMN6040SSDQ-13

    DMN6040SSDQ-13

    MOSFET 2N-CH 60V 5A 8SO

    Diodes Incorporated

    7,905
    RFQ
    DMN6040SSDQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 5A (Ta) 40mOhm @ 4.5A, 10V 3V @ 250µA 22.4nC @ 10V 1287pF @ 25V 1.3W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    DMT3020LFDB-7

    DMT3020LFDB-7

    MOSFET 2N-CH 30V 7.7A 6UDFN

    Diodes Incorporated

    4,138
    RFQ
    DMT3020LFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.7A 20mOhm @ 9A, 10V 3V @ 250µA 7nC @ 10V 393pF @ 15V 700mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount U-DFN2020-6 (Type B)
    TPC8408,LQ(S

    TPC8408,LQ(S

    MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

    Toshiba Semiconductor and Storage

    2,387
    RFQ
    TPC8408,LQ(S

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 40V 6.1A, 5.3A 32mOhm @ 3.1A, 10V 2.3V @ 100µA 24nC @ 10V 850pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP
    DMN3024LSD-13

    DMN3024LSD-13

    MOSFET 2N-CH 30V 6.8A 8SO

    Diodes Incorporated

    68,446
    RFQ
    DMN3024LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 24mOhm @ 7A, 10V 3V @ 250µA 12.9nC @ 10V 608pF @ 15V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SIA517DJ-T1-GE3

    SIA517DJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A PPAK8X8

    Vishay Siliconix

    30,879
    RFQ
    SIA517DJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 4.5A 29mOhm @ 5A, 4.5V 1V @ 250µA 15nC @ 8V 500pF @ 6V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    FDC6306P

    FDC6306P

    MOSFET 2P-CH 20V 1.9A SSOT6

    onsemi

    6,833
    RFQ
    FDC6306P

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.9A 170mOhm @ 1.9A, 4.5V 1.5V @ 250µA 4.2nC @ 4.5V 441pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    CMLDM7585 TR PBFREE

    CMLDM7585 TR PBFREE

    MOSFET N/P-CH 20V 0.65A SOT563

    Central Semiconductor Corp

    69,209
    RFQ
    CMLDM7585 TR PBFREE

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 650mA 230mOhm @ 600mA, 4.5V 1.1V @ 250µA 1.58nC @ 4.5V 100pF @ 16V 350mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-563
    UT6MA2TCR

    UT6MA2TCR

    MOSFET N/P-CH 30V 4A HUML2020L8

    Rohm Semiconductor

    31,477
    RFQ
    UT6MA2TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A (Ta) 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V 2.5V @ 1mA 4.3nC @ 10V, 6.7nC @ 10V 180pF @ 15V, 305pF @ 15V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    SIA923AEDJ-T1-GE3

    SIA923AEDJ-T1-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    21,563
    RFQ
    SIA923AEDJ-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 54mOhm @ 3.8A, 4.5V 900mV @ 250µA 25nC @ 8V 770pF @ 10V 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    TSM2537CQ RFG

    TSM2537CQ RFG

    MOSFET N/P-CH 20V 11.6A 6TDFN

    Taiwan Semiconductor Corporation

    24,072
    RFQ
    TSM2537CQ RFG

    Tabla de datos

    - 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 11.6A (Tc), 9A (Tc) 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V 1V @ 250µA 9.1nC @ 4.5V, 9.8nC @ 4.5V 677pF @ 10V, 744pF @ 10V 6.25W -55°C ~ 150°C (TJ) - - Surface Mount 6-TDFN (2x2)
    US6M11TR

    US6M11TR

    MOSFET N/P-CH 20V/12V 1.5A TUMT6

    Rohm Semiconductor

    13,020
    RFQ
    US6M11TR

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 12V 1.5A, 1.3A 180mOhm @ 1.5A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 110pF @ 10V 1W 150°C (TJ) - - Surface Mount TUMT6
    TSM200N03DPQ33 RGG

    TSM200N03DPQ33 RGG

    MOSFET 2N-CH 30V 20A 8PDFN

    Taiwan Semiconductor Corporation

    12,909
    RFQ
    TSM200N03DPQ33 RGG

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 20A (Tc) 20mOhm @ 10A, 10V 2.5V @ 250µA 4nC @ 4.5V 345pF @ 25V 20W -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (3x3)
    CSD85301Q2

    CSD85301Q2

    MOSFET 2N-CH 20V 5A 6WSON

    Texas Instruments

    11,255
    RFQ
    CSD85301Q2

    Tabla de datos

    NexFET™ 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 5V Drive 20V 5A 27mOhm @ 5A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 469pF @ 10V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 6-WSON (2x2)
    FDC3601N

    FDC3601N

    MOSFET 2N-CH 100V 1A SSOT6

    onsemi

    3,119
    RFQ
    FDC3601N

    Tabla de datos

    PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 1A 500mOhm @ 1A, 10V 4V @ 250µA 5nC @ 10V 153pF @ 50V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
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