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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NVMFD5483NLT1G

    NVMFD5483NLT1G

    MOSFET 2N-CH 60V 6.4A 8DFN

    onsemi

    2,435
    RFQ
    NVMFD5483NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 6.4A 36mOhm @ 15A, 10V 2.5V @ 250µA 23.4nC @ 10V 668pF @ 25V 3.1W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    SI7901EDN-T1-E3

    SI7901EDN-T1-E3

    MOSFET 2P-CH 20V 4.3A PPAK 1212

    Vishay Siliconix

    3,335
    RFQ

    -

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.3A 48mOhm @ 6.3A, 4.5V 1V @ 800µA 18nC @ 4.5V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    SSM6P35FE(TE85L,F)

    SSM6P35FE(TE85L,F)

    MOSFET 2P-CH 20V 0.1A ES6

    Toshiba Semiconductor and Storage

    4,371
    RFQ
    SSM6P35FE(TE85L,F)

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 100mA 8Ohm @ 50mA, 4V 1V @ 1mA - 12.2pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
    BSL306NH6327XTSA1

    BSL306NH6327XTSA1

    MOSFET 2N-CH 30V 2.3A TSOP6-6

    Infineon Technologies

    3,845
    RFQ
    BSL306NH6327XTSA1

    Tabla de datos

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 2.3A 57mOhm @ 2.3A, 10V 2V @ 11µA 1.6nC @ 5V 275pF @ 15V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TSOP6-6
    ZXMD63C02XTC

    ZXMD63C02XTC

    MOSFET N/P-CH 20V 8MSOP

    Diodes Incorporated

    4,116
    RFQ
    ZXMD63C02XTC

    Tabla de datos

    - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V - 130mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 6nC @ 4.5V 350pF @ 15V 1.04W -55°C ~ 150°C (TJ) - - Surface Mount 8-MSOP
    ZXMD63C03XTC

    ZXMD63C03XTC

    MOSFET N/P-CH 30V 8MSOP

    Diodes Incorporated

    4,044
    RFQ
    ZXMD63C03XTC

    Tabla de datos

    - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 135mOhm @ 1.7A, 10V 1V @ 250µA (Min) 8nC @ 10V 290pF @ 25V 1.04W -55°C ~ 150°C (TJ) - - Surface Mount 8-MSOP
    DMNH4011SPSWQ-13

    DMNH4011SPSWQ-13

    MOSFET BVDSS: 31V~40V POWERDI506

    Diodes Incorporated

    2,870
    RFQ
    DMNH4011SPSWQ-13

    Tabla de datos

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    TSM3911DCX6

    TSM3911DCX6

    MOSFET 2P-CH 20V 2.2A SOT26

    Taiwan Semiconductor Corporation

    3,220
    RFQ

    -

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 2.2A (Ta) 140mOhm @ 2.2A, 4.5V 950mV @ 250µA 15.23nC @ 4.5V 882.51pF @ 6V 1.15W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
    IRF9956TR

    IRF9956TR

    MOSFET 2N-CH 30V 3.5A 8SO

    Infineon Technologies

    2,492
    RFQ
    IRF9956TR

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9953TR

    IRF9953TR

    MOSFET 2P-CH 30V 2.3A 8SO

    Infineon Technologies

    3,798
    RFQ
    IRF9953TR

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    NDS9933A

    NDS9933A

    MOSFET 2P-CH 20V 2.8A 8SOIC

    onsemi

    3,515
    RFQ
    NDS9933A

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.8A 140mOhm @ 2.8A, 4.5V 1V @ 250µA 8.5nC @ 4.5V 405pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDG8842CZ

    FDG8842CZ

    MOSFET N/P-CH 30V/25V 0.75A SC88

    onsemi

    4,182
    RFQ
    FDG8842CZ

    Tabla de datos

    PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 25V 750mA, 410mA 400mOhm @ 750mA, 4.5V 1.5V @ 250µA 1.44nC @ 4.5V 120pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    AO6602L

    AO6602L

    MOSFET N/P-CH 30V 6TSOP

    Alpha & Omega Semiconductor Inc.

    2,365
    RFQ
    AO6602L

    Tabla de datos

    - SC-74, SOT-457 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate 30V - 75mOhm @ 3.1A, 10V 3V @ 250µA 8.5nC @ 10V 240pF @ 15V 1.15W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    AO6800

    AO6800

    MOSFET 2N-CH 30V 3.4A 6TSOP

    Alpha & Omega Semiconductor Inc.

    3,278
    RFQ
    AO6800

    Tabla de datos

    - SC-74, SOT-457 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.4A 60mOhm @ 3.4A, 10V 1.5V @ 250µA 10nC @ 10V 235pF @ 15V 1.15W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    DMG4932LSD-13

    DMG4932LSD-13

    MOSFET 2N-CH 30V 9.5A 8SO

    Diodes Incorporated

    4,298
    RFQ
    DMG4932LSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.5A 15mOhm @ 9A, 10V 2.4V @ 250µA 42nC @ 10V 1932pF @ 15V 1.19W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    DMP2100UFU-7

    DMP2100UFU-7

    MOSFET 2P-CH 20V 5.7A 6UDFN

    Diodes Incorporated

    3,652
    RFQ
    DMP2100UFU-7

    Tabla de datos

    - 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Common Drain - 20V 5.7A 38mOhm @ 3.5A, 10V 1.4V @ 250µA 21.4nC @ 10V 906pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2030-6 (Type B)
    PJS6811_S1_00001

    PJS6811_S1_00001

    MOSFET 2P-CH 20V 2.7A SOT23-6

    Panjit International Inc.

    3,367
    RFQ
    PJS6811_S1_00001

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 2.7A (Ta) 105mOhm @ 2.7A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 416pF @ 10V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    DMTH10H025LPDWQ-13

    DMTH10H025LPDWQ-13

    MOSFET 2N-CH 100V 28A PWRDI50

    Diodes Incorporated

    3,879
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 28A (Tc) 23mOhm @ 20A, 10V 3V @ 250µA 22nC @ 10V 1463pF @ 50V 3.4W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
    SI1555DL-T1-E3

    SI1555DL-T1-E3

    MOSFET N/P-CH 20V/8V 0.66A SC70

    Vishay Siliconix

    4,293
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 8V 660mA, 570mA 385mOhm @ 660mA, 4.5V 1.4V @ 250µA 1.2nC @ 4.5V - 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1563EDH-T1-E3

    SI1563EDH-T1-E3

    MOSFET N/P-CH 20V SC70-6

    Vishay Siliconix

    4,830
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.13A, 880mA 280mOhm @ 1.13A, 4.5V 1V @ 100µA 1nC @ 4.5V - 570mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
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