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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    DMTH4011SPDWQ-13

    DMTH4011SPDWQ-13

    MOSFET 2N-CH 40V 11.1A PWRDI50

    Diodes Incorporated

    3,615
    RFQ
    DMTH4011SPDWQ-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 11.1A (Ta), 42A (Tc) 15mOhm @ 20A, 10V 4V @ 250µA 10.6nC @ 10V 805pF @ 20V 2.6W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (SWP)
    FDG6306P

    FDG6306P

    MOSFET 2P-CH 20V 0.6A SC88

    onsemi

    2,347
    RFQ
    FDG6306P

    Tabla de datos

    PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 600mA 420mOhm @ 600mA, 4.5V 1.5V @ 250µA 2nC @ 4.5V 114pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    SI1905DL-T1-E3

    SI1905DL-T1-E3

    MOSFET 2P-CH 8V 0.57A SC70-6

    Vishay Siliconix

    4,895
    RFQ
    SI1905DL-T1-E3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 570mA 600mOhm @ 570mA, 4.5V 450mV @ 250µA (Min) 2.3nC @ 4.5V - 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1958DH-T1-E3

    SI1958DH-T1-E3

    MOSFET 2N-CH 20V 1.3A SC70-6

    Vishay Siliconix

    3,429
    RFQ
    SI1958DH-T1-E3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.3A 205mOhm @ 1.3A, 4.5V 1.6V @ 250µA 3.8nC @ 10V 105pF @ 10V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1972DH-T1-E3

    SI1972DH-T1-E3

    MOSFET 2N-CH 30V 1.3A SC70-6

    Vishay Siliconix

    3,460
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 1.3A 225mOhm @ 1.3A, 10V 2.8V @ 250µA 2.8nC @ 10V 75pF @ 15V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1988DH-T1-E3

    SI1988DH-T1-E3

    MOSFET 2N-CH 20V 1.3A SC70-6

    Vishay Siliconix

    2,015
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.3A 168mOhm @ 1.4A, 4.5V 1V @ 250µA 4.1nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI3850ADV-T1-E3

    SI3850ADV-T1-E3

    MOSFET N/P-CH 20V 6TSOP

    Vishay Siliconix

    3,697
    RFQ

    -

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 20V 1.4A, 960mA 300mOhm @ 500mA, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V - 1.08W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    BSL306NL6327HTSA1

    BSL306NL6327HTSA1

    MOSFET 2N-CH 30V 2.3A TSOP6-6

    Infineon Technologies

    4,436
    RFQ
    BSL306NL6327HTSA1

    Tabla de datos

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.3A 57mOhm @ 2.3A, 10V 2V @ 11µA 1.6nC @ 5V 275pF @ 15V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-TSOP6-6
    SI1972DH-T1-GE3

    SI1972DH-T1-GE3

    MOSFET 2N-CH 30V 1.3A SC70-6

    Vishay Siliconix

    3,089
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 1.3A 225mOhm @ 1.3A, 10V 2.8V @ 250µA 2.8nC @ 10V 75pF @ 15V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI1988DH-T1-GE3

    SI1988DH-T1-GE3

    MOSFET 2N-CH 20V 1.3A SC70-6

    Vishay Siliconix

    3,140
    RFQ

    -

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.3A 168mOhm @ 1.4A, 4.5V 1V @ 250µA 4.1nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    SI3850ADV-T1-GE3

    SI3850ADV-T1-GE3

    MOSFET N/P-CH 20V 6TSOP

    Vishay Siliconix

    4,432
    RFQ

    -

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 20V 1.4A, 960mA 300mOhm @ 500mA, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V - 1.08W -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SIA950DJ-T1-GE3

    SIA950DJ-T1-GE3

    MOSFET 2N-CH 190V 0.95A PPAK8X8

    Vishay Siliconix

    4,737
    RFQ
    SIA950DJ-T1-GE3

    Tabla de datos

    LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 190V 950mA 3.8Ohm @ 360mA, 4.5V 1.4V @ 250µA 4.5nC @ 10V 90pF @ 100V 7W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SI4200DY-T1-GE3

    SI4200DY-T1-GE3

    MOSFET 2N-CH 25V 8A 8SOIC

    Vishay Siliconix

    2,391
    RFQ
    SI4200DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 8A 25mOhm @ 7.3A, 10V 2.2V @ 250µA 12nC @ 10V 415pF @ 13V 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    ITD50N04S4L07ATMA1

    ITD50N04S4L07ATMA1

    MOSFET 2N-CH 40V 50A TO252-5

    Infineon Technologies

    4,744
    RFQ
    ITD50N04S4L07ATMA1

    Tabla de datos

    OptiMOS™ TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel, Common Drain Logic Level Gate 40V 50A (Tc) 7.2mOhm @ 50A, 10V 2.2V @ 18µA 33nC @ 10V 2480pF @ 25V 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount PG-TO252-5-311
    STL13DP10F6

    STL13DP10F6

    MOSFET 2P-CH 100V 13A POWERFLAT

    STMicroelectronics

    2,546
    RFQ

    -

    DeepGATE™, STripFET™ VI 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 100V 13A 180mOhm @ 1.7A, 10V 4V @ 250µA 16.5nC @ 10V 864pF @ 25V 62.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6)
    DMNH6035SPDWQ-13

    DMNH6035SPDWQ-13

    MOSFET 2N-CH 60V 33A PWRDI50

    Diodes Incorporated

    2,498
    RFQ
    DMNH6035SPDWQ-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 33A (Tc) 35mOhm @ 15A, 10V 3V @ 250µA 16nC @ 10V 879pF @ 25V 2.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type R)
    FDS6898A_NF40

    FDS6898A_NF40

    MOSFET 2N-CH 20V 9.4A 8SOIC

    onsemi

    2,854
    RFQ
    FDS6898A_NF40

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 9.4A 14mOhm @ 9.4A, 4.5V 1.5V @ 250µA 23nC @ 4.5V 1821pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF5851

    IRF5851

    MOSFET N/P-CH 20V 2.7A 6TSOP

    Infineon Technologies

    4,778
    RFQ
    IRF5851

    Tabla de datos

    HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 2.7A, 2.2A 90mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW - - - Surface Mount 6-TSOP
    IRF5852

    IRF5852

    MOSFET 2N-CH 20V 2.7A 6TSOP

    Infineon Technologies

    4,323
    RFQ
    IRF5852

    Tabla de datos

    HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.7A 90mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW - - - Surface Mount 6-TSOP
    IRF5852TR

    IRF5852TR

    MOSFET 2N-CH 20V 2.7A 6TSOP

    Infineon Technologies

    2,280
    RFQ
    IRF5852TR

    Tabla de datos

    HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.7A 90mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
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