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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    CAS310M17BM3

    CAS310M17BM3

    SIC 1700V 310A

    Wolfspeed, Inc.

    5
    RFQ
    CAS310M17BM3

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) - - 1700V (1.7kV) 310A - - - - - - - - Chassis Mount -
    MSCSM170AM029CT6LIAG

    MSCSM170AM029CT6LIAG

    MOSFET 2N-CH 1700V 676A

    Microchip Technology

    8
    RFQ
    MSCSM170AM029CT6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 676A (Tc) 3.75mOhm @ 360A, 20V 3.3V @ 30mA 2136nC @ 20V 39600pF @ 1000V 3kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAB500M17HM3

    CAB500M17HM3

    MOSFET 2N-CH 1700V 653A MODULE

    Wolfspeed, Inc.

    3,314
    RFQ
    CAB500M17HM3

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 653A (Tc) 2.6mOhm @ 500A, 15V 3.6V @ 203mA 1992nC @ 15V 64900pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    PMDXB1200UPEZ

    PMDXB1200UPEZ

    MOSFET 2P-CH 30V 0.41A 6DFN

    Nexperia USA Inc.

    797
    RFQ
    PMDXB1200UPEZ

    Tabla de datos

    - 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 410mA 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2nC @ 4.5V 43.2pF @ 15V 285mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
    BSS8402DW-TP

    BSS8402DW-TP

    MOSFET N/P-CH 60V/50V SOT363

    Micro Commercial Co

    896
    RFQ
    BSS8402DW-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V, 50V 115mA, 130mA 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V 2.5V @ 250µA, 2V @ 250µA - 50pF @ 25V, 30pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMT3020LDV-7

    DMT3020LDV-7

    MOSFET 2N-CH 30V 32A PWRDI3333

    Diodes Incorporated

    708
    RFQ
    DMT3020LDV-7

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 32A (Tc) 20mOhm @ 9A, 10V 2.5V @ 250µA 7nC @ 10V 393pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
    QH8JA1TCR

    QH8JA1TCR

    MOSFET 2P-CH 20V 5A TSMT8

    Rohm Semiconductor

    59
    RFQ
    QH8JA1TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active - 2 P-Channel (Dual) - 20V 5A 38mOhm @ 5A, 4.5V 1.2V @ 1mA 10.2nC @ 4.5V 720pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
    ZXMC4559DN8TA

    ZXMC4559DN8TA

    MOSFET N/P-CH 60V 3.6A/2.6A 8SO

    Diodes Incorporated

    572
    RFQ
    ZXMC4559DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.6A, 2.6A 55mOhm @ 4.5A, 10V 1V @ 250µA (Min) 20.4nC @ 10V 1063pF @ 30V, 1021pF @ 30V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ZXMP6A16DN8QTA

    ZXMP6A16DN8QTA

    MOSFET 2P-CH 60V 2.9A 8SO

    Diodes Incorporated

    500
    RFQ
    ZXMP6A16DN8QTA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 85mOhm @ 2.9A, 10V 1V @ 250µA (Min) 24.2nC @ 10V 1021pF @ 30V 1.81W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ZXMP3A16DN8TA

    ZXMP3A16DN8TA

    MOSFET 2P-CH 30V 4.2A 8SO

    Diodes Incorporated

    58
    RFQ
    ZXMP3A16DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.2A 45mOhm @ 4.2A, 10V 1V @ 250µA (Min) 29.6nC @ 10V 1022pF @ 15V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    BUK7K8R7-40EX

    BUK7K8R7-40EX

    MOSFET 2N-CH 40V 30A LFPAK56D

    Nexperia USA Inc.

    80
    RFQ
    BUK7K8R7-40EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 30A 8.5mOhm @ 15A, 10V 4V @ 1mA 21.8nC @ 10V 1439pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    BUK9K20-80EX

    BUK9K20-80EX

    MOSFET 2N-CH 80V 23A LFPAK56D

    Nexperia USA Inc.

    50
    RFQ
    BUK9K20-80EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 23A (Ta) 17mOhm @ 10A, 10V 2.1V @ 1mA 25.5nC @ 5V 3462pF @ 25V 68W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    ALD114904SAL

    ALD114904SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    49
    RFQ
    ALD114904SAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD114913SAL

    ALD114913SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    100
    RFQ
    ALD114913SAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD1105SBL

    ALD1105SBL

    MOSFET 2N/2P-CH 10.6V 14SOIC

    Advanced Linear Devices Inc.

    63
    RFQ
    ALD1105SBL

    Tabla de datos

    - 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
    ALD1107SBL

    ALD1107SBL

    MOSFET 4P-CH 10.6V 14SOIC

    Advanced Linear Devices Inc.

    50
    RFQ
    ALD1107SBL

    Tabla de datos

    - 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
    ALD110800PCL

    ALD110800PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    30
    RFQ
    ALD110800PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD310708SCL

    ALD310708SCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    45
    RFQ
    ALD310708SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD1103SBL

    ALD1103SBL

    MOSFET 2N/2P-CH 10.6V 14SOIC

    Advanced Linear Devices Inc.

    56
    RFQ
    ALD1103SBL

    Tabla de datos

    - 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
    ALD1101PAL

    ALD1101PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    55
    RFQ
    ALD1101PAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
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