Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FDG6317NZ

    FDG6317NZ

    MOSFET 2N-CH 20V 0.7A SC88

    onsemi

    5,104
    RFQ
    FDG6317NZ

    Tabla de datos

    PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 700mA 400mOhm @ 700mA, 4.5V 1.5V @ 250µA 1.1nC @ 4.5V 66.5pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    RFD8P05SM9AS2463

    RFD8P05SM9AS2463

    MOSFET P-CH 50V 8A

    Harris Corporation

    2,500
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    HP4936DY

    HP4936DY

    MOSFET 2N-CH 30V 5.8A 8SOIC

    Fairchild Semiconductor

    1,960
    RFQ
    HP4936DY

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.8A (Ta) 37mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 625pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FQS4900TF

    FQS4900TF

    MOSFET N/P-CH 60V/300V 8SOIC

    onsemi

    3,035
    RFQ

    -

    QFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 60V, 300V 1.3A, 300mA 550mOhm @ 650mA, 10V 1.95V @ 20mA 2.1nC @ 5V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTLGD3502NT2G

    NTLGD3502NT2G

    MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

    onsemi

    3,618
    RFQ
    NTLGD3502NT2G

    Tabla de datos

    - 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.3A, 3.6A 60mOhm @ 4.3A, 4.5V 2V @ 250µA 4nC @ 4.5V 480pF @ 10V 1.74W -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (3x3)
    FW282-V-TL-E

    FW282-V-TL-E

    NCH+NCH 4V DRIVE SERIES

    onsemi

    5,000
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDW2503N

    FDW2503N

    MOSFET 2N-CH 20V 5.5A 8TSSOP

    Fairchild Semiconductor

    3,522
    RFQ
    FDW2503N

    Tabla de datos

    PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5.5A 21mOhm @ 5.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1082pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI3134KDW-TP

    SI3134KDW-TP

    MOSFET 2N-CH 20V 0.75A SOT363

    Micro Commercial Co

    21,000
    RFQ
    SI3134KDW-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 750mA 380mOhm @ 650mA, 4.5V 1.1V @ 250µA 20nC @ 4.5V 120pF @ 16V 150mW 150°C (TJ) - - Surface Mount SOT-363
    UPA2350T1G(2)-E4-A

    UPA2350T1G(2)-E4-A

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    15,000
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    SSFB12N05

    SSFB12N05

    MOSFET N/P-CH 12V 5A 6DFN

    Good-Ark Semiconductor

    7,770
    RFQ
    SSFB12N05

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 12V 5A (Ta) 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V 1V @ 250µA 6.6nC @ 4.5V, 9.2nC @ 4.5V 495pF @ 6V, 520pF @ 6V 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
    PJX8807_R1_00001

    PJX8807_R1_00001

    MOSFET 2P-CH 20V 0.5A SOT563

    Panjit International Inc.

    8,000
    RFQ
    PJX8807_R1_00001

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 500mA (Ta) 1.2Ohm @ 500mA, 4.5V 1V @ 250µA 1.4nC @ 4.5V 38pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    CEM9926A

    CEM9926A

    MOSFET 2N-CH 20V 7A 8SOP

    UMW

    3,000
    RFQ
    CEM9926A

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 20V 7A (Ta) 26mOhm @ 7A, 4.5V 800mV @ 250µA 15.2nC @ 4.5V 1050pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FDC6322C

    FDC6322C

    MOSFET N/P-CH 25V 0.22A SSOT6

    Fairchild Semiconductor

    364,497
    RFQ
    FDC6322C

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 220mA, 460mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    FDS6986S

    FDS6986S

    MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

    Fairchild Semiconductor

    134,344
    RFQ
    FDS6986S

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V 3V @ 250µA, 3V @ 1mA 9nC @ 5V, 16nC @ 5V 695pF @ 10V, 1233pF @ 10V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTD4906NAT4H

    NTD4906NAT4H

    MOSFET N-CH 30V 54A

    onsemi

    57,500
    RFQ
    NTD4906NAT4H

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMS5361L

    FDMS5361L

    MOSFET N-CH

    Fairchild Semiconductor

    3,000
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    PJX138K-AU_R1_000A1

    PJX138K-AU_R1_000A1

    MOSFET 2N-CH 50V 0.35A SOT563

    Panjit International Inc.

    2,253
    RFQ
    PJX138K-AU_R1_000A1

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 350mA (Ta) 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 1nC @ 4.5V 50pF @ 25V 223mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    IRFR420U

    IRFR420U

    MOSFET N-CH 500V 2.5A

    Harris Corporation

    1,995
    RFQ
    IRFR420U

    Tabla de datos

    * - Bulk Active - - - - - - - - - - - - - - -
    G2K3N10L6

    G2K3N10L6

    MOSFET 2N-CH 100V 3A SOT23-6L

    Goford Semiconductor

    1,877
    RFQ
    G2K3N10L6

    Tabla de datos

    TrenchFET® SOT-23-6 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 3A (Tc) 220mOhm @ 2A, 10V 2.2V @ 250µA 4.8nC @ 4.5V 536pF @ 50V 1.67W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    CPH6635-TL-H

    CPH6635-TL-H

    MOSFET N/P-CH 30V/20V 0.4A 6CPH

    onsemi

    3,983
    RFQ
    CPH6635-TL-H

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 400mA, 1.5A 3.7Ohm @ 80mA, 4V - 1.58nC @ 10V 7pF @ 10V 800mW 150°C (TJ) - - Surface Mount 6-CPH
    Total 5737 Record«Prev1... 979899100101102103104...287Next»
    Correo electrónico
    Lo que contiene
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios