Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-GBPC3512WBRIDGE RECT 1P 1.2KV 35A GBPC-W Vishay General Semiconductor - Diodes Division |
1,254 |
|
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VS-GBPC | 4-Square, GBPC-W | Bulk | Active | Single Phase | Standard | 1.2 kV | 35 A | - | 2 mA @ 1.2 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBPC-W |
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VS-GBPC3510ABRIDGE RECT 1P 1KV 35A GBPC-A Vishay General Semiconductor - Diodes Division |
510 |
|
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VS-GBPC | 4-Square, GBPC-A | Bulk | Active | Single Phase | Standard | 1 kV | 35 A | - | 2 mA @ 1 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | GBPC-A |
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VS-U5FH30BA60BRIDGE RECT 1P 600V 30A SOT-227 Vishay General Semiconductor - Diodes Division |
165 |
|
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- | SOT-227-4, miniBLOC | Tube | Active | Single Phase | Standard | 600 V | 30 A | 2.1 V @ 30 A | 30 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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VS-300MT160CBRIDGE RECT 3P 1.6KV 258A MTC Vishay General Semiconductor - Diodes Division |
33 |
|
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- | MTC | Bulk | Active | Three Phase | Standard | 1.6 kV | 258 A | 1.7 V @ 300 A | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | MTC |
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B80C800DM-E3/45BRIDGE RECT 1P 125V 900MA DFM Vishay General Semiconductor - Diodes Division |
4,998 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 125 V | 900 mA | 1 V @ 900 mA | 10 µA @ 125 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | DFM |
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B380C800DM-E3/45BRIDGE RECT 1P 600V 900MA DFM Vishay General Semiconductor - Diodes Division |
4,855 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 600 V | 900 mA | 1 V @ 900 mA | 10 µA @ 600 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | DFM |
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DF02MA-E3/45BRIDGE RECT 1PHASE 200V 1A DFM Vishay General Semiconductor - Diodes Division |
9,929 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 200 V | 1 A | 1.1 V @ 1 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | DFM |
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DF10MA-E3/45BRIDGE RECT 1PHASE 1KV 1A DFM Vishay General Semiconductor - Diodes Division |
7,288 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | DFM |
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DF01SA-E3/45BRIDGE RECT 1PHASE 100V 1A DFS Vishay General Semiconductor - Diodes Division |
3,424 |
|
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- | 4-SMD, Gull Wing | Tube | Active | Single Phase | Standard | 100 V | 1 A | 1.1 V @ 1 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFS |
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B80C800GL-801E4/51BRIDGE RECT 1P 125V 900MA WOG Vishay General Semiconductor - Diodes Division |
2,900 |
|
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- | 4-Circular, WOG | Bag | Active | Single Phase | Standard | 125 V | 900 mA | 1 V @ 900 mA | 10 µA @ 125 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | WOG |