Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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GSIB680-E3/45BRIDGE RECT 1P 800V 2.8A GSIB-5S Vishay General Semiconductor - Diodes Division |
1,461 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 800 V | 2.8 A | 950 mV @ 3 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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VS-KBPC1005BRIDGE RECT 1PHASE 50V 3A KBPC1 Vishay General Semiconductor - Diodes Division |
223 |
|
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VS-KBPC1 | 4-Square, KBPC-1 | Bulk | Active | Single Phase | Standard | 50 V | 3 A | 1.1 V @ 1.5 A | 10 µA @ 50 V | -40°C ~ 150°C (TJ) | - | - | Through Hole | KBPC1 |
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GBU4D-E3/45BRIDGE RECT 1PHASE 200V 3A GBU Vishay General Semiconductor - Diodes Division |
1,492 |
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- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 200 V | 3 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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GBU4J-E3/51BRIDGE RECT 1PHASE 600V 4A GBU Vishay General Semiconductor - Diodes Division |
1,047 |
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- | 4-SIP, GBU | Bulk | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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GSIB1580-E3/45BRIDGE RECT 1P 800V 15A GSIB-5S Vishay General Semiconductor - Diodes Division |
1,138 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 800 V | 15 A | 950 mV @ 7.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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GSIB1520-E3/45BRIDGE RECT 1P 200V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
790 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 200 V | 3.5 A | 950 mV @ 7.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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GBPC610-E4/51BRIDGE RECT 1PHASE 1KV 3A GBPC6 Vishay General Semiconductor - Diodes Division |
417 |
|
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- | 4-Square, GBPC-6 | Bulk | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 3 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBPC6 |
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GBPC602-E4/51BRIDGE RECT 1PHASE 200V 3A GBPC6 Vishay General Semiconductor - Diodes Division |
554 |
|
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- | 4-Square, GBPC-6 | Bulk | Active | Single Phase | Standard | 200 V | 3 A | 1 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBPC6 |
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GBPC608-E4/51BRIDGE RECT 1PHASE 800V 3A GBPC6 Vishay General Semiconductor - Diodes Division |
307 |
|
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- | 4-Square, GBPC-6 | Bulk | Active | Single Phase | Standard | 800 V | 3 A | 1 V @ 3 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBPC6 |
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BU1208-E3/45BRIDGE RECT 1PHASE 800V 3.4A BU Vishay General Semiconductor - Diodes Division |
2,353 |
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- | 4-SIP, BU | Bulk | Active | Single Phase | Standard | 800 V | 3.4 A | 1.05 V @ 6 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |