Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FT2000KADIODE GEN PURP 50V 20A TO220AC |
98,840 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 50 V | 20A | 960 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 150°C |
![]() |
SBX2550DIODE SCHOTTKY 50V 25A P600 |
500 |
|
![]() Tabla de datos |
- | P600, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 25A | 570 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
![]() |
KT20A150DIODE GEN PURP 150V 20A TO220AC |
1,050 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
![]() |
KT20K150DIODE GEN PURP 150V 20A TO220AC |
433 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
![]() |
ADC6D10065GDIODE SIL SIC 650V 36A TO263-2 |
1,000 |
|
![]() Tabla de datos |
WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
![]() |
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 |
12,385 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
![]() |
QSD50HCS120U1200v 50amp SiC Schottky Barrier |
1,000 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 149A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 2380000pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2L | -55°C ~ 175°C |
![]() |
NC1D120C20KTNGSiC Schottky 1200V 20A TO247- 2L |
500 |
|
![]() Tabla de datos |
NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 1371pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
![]() |
P2500YDIODE AVALANCHE 2KV 25A P600 |
8,000 |
|
![]() Tabla de datos |
- | P600, Axial | Tape & Reel (TR) | Active | Avalanche | 2000 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 2 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
![]() |
ADC3D10065IDIODE SIL SIC 1200V 10A TO220 |
550 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 650 V | 6.3pF @ 200V, 100kHz | - | - | Through Hole | TO-220F | -40°C ~ 175°C |
![]() |
QSD10HCS120USchottky barrier diode 1200v 10a |
1,600 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 770pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
![]() |
NC1D120C30KTNGSiC Schottky 1200V 30A TO247- 2L |
300 |
|
![]() Tabla de datos |
NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 85 µA @ 1200 V | 2125pF @ 0.1V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
![]() |
FFSH20120ASILICON CARBIDE SCHOTTKY DIODE |
900 |
|
![]() Tabla de datos |
- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | - | - | Through Hole | TO-247-2 | - |
![]() |
QSD25HCS170U1700v 25amp SiC Schottky Barrier |
1,233 |
|
- |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 94A | 1.9 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 2822pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
![]() |
NC1D120C40GTDNSiC Diode 1200V 40A Dual Die TO2 |
300 |
|
![]() Tabla de datos |
NC1D | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | 1.2 kV | 40A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | - | 50 µA @ 1.2 kV | 1371pF @ 100mV, 1MHz | - | - | Through Hole | TO-247-3L | -55°C ~ 175°C |
![]() |
NC1D120C60GTDNSiC Schottky 1200V 60A TO247- 3L |
300 |
|
![]() Tabla de datos |
- | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | - | 60A | - | - | - | - | 2125pF @ 0.1V, 1MHz | - | - | Surface Mount | TO-247-3L | -55°C ~ 175°C |
![]() |
ADC4D10120EDIODE SIL SIC 1200V 33A TO252-2 |
2,500 |
|
![]() Tabla de datos |
WBG | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
![]() |
ADC4D10120HDIODE SIL SIC 1200V 31.5A TO247- |
950 |
|
![]() Tabla de datos |
WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
![]() |
ADE4D20120GDIODE SIL SIC 1200V 56A TO263-2 |
600 |
|
![]() Tabla de datos |
WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
![]() |
ADC4D20120HDIODE SIL SIC 1200V 54A TO247-2 |
800 |
|
![]() Tabla de datos |
WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 10 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |