Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC2D10650TJDIODE SIL CARBIDE 650V 10A 5DFN |
890 |
|
![]() Tabla de datos |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
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WNSC2D10650WQDIODE SIL CARB 650V 10A TO247-2 |
517 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
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STTH806DDIODE GEN PURP 600V 8A TO220AC |
3,924 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 8A | 1.85 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 8 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
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IDK12G65C5XTMA1DIODE SIL CARB 650V 12A TO263-2 |
2,454 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 2.1 mA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
VS-10ETF10-M3DIODE GEN PURP 1KV 10A TO220AC |
4,509 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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RURU5050DIODE AVALANCHE 500V 50A TO218 |
580 |
|
![]() Tabla de datos |
- | TO-218-1 | Bulk | Active | Avalanche | 500 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 500 µA @ 500 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
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PCDB0465G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,400 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 146pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
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NRVB120ESFT1GDIODE SCHOTTKY 20V 1A SOD123FL |
2,788 |
|
![]() Tabla de datos |
- | SOD-123F | Tape & Reel (TR) | Obsolete | Schottky | 20 V | 1A | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 20 V | - | - | - | Surface Mount | SOD-123FL | -65°C ~ 150°C |
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S6D10065L650V, 10A, DFN88, SIC SCHOTTKY D |
833 |
|
![]() Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RHRU50100DIODE AVALANCHE 1KV 50A TO218 |
280 |
|
![]() Tabla de datos |
- | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 3 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
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SICR10650CTDIODE SIL CARB 650V 5A TO220AB |
225 |
|
![]() Tabla de datos |
- | TO-220-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | TO-220AB | -55°C ~ 175°C |
|
SICRF5650DIODE SIL CARB 650V 5A ITO220AC |
224 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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SICR5650DIODE SIL CARB 650V 5A TO220AC |
158 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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MUR6060BS-BPDIODE GEN PURP 600V 60A TO247AD |
1,680 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | 200pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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BYC75W-600PT2QDIODE GEN PURP 600V 75A TO247-2 |
508 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 2.75 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
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WNSC6D16650CW6QDIODE SIL CARB 650V 16A TO247-3 |
3,000 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C |
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MUR6060BH-BPDIODE GEN PURP 600V 60A TO247AD |
1,798 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 10 µA @ 600 V | 400pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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NRVBB4030T4GDIODE SCHOTTKY 30V 40A D2PAK |
4,581 |
|
![]() Tabla de datos |
SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 30 V | - | - | - | Surface Mount | D2PAK | -65°C ~ 175°C |
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PCDP0465G1_T0_00001TO-220AC, SIC |
1,996 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 146pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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FFSD0465ADIODE SIL CARB 650V 7.6A DPAK |
2,442 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |