Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-50WQ06FNHM3DIODE SCHOTTKY 60V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
926 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Schottky | 60 V | 5.5A | 570 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 60 V | 360pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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V35PW22-M3/IDIODE SCHOTTKY 200V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
1,593 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Schottky | 200 V | 35A | 990 mV @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 200 V | 1320pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | SlimDPAK | -40°C ~ 175°C |
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VS-20ETS08STRL-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
6,200 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 800 V | 20A | 1.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-50WQ04FNHM3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
1,817 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Schottky | 40 V | 5.5A | 510 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 40 V | 405pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-8EWS08S-M3DIODE GEN PURP 800V 8A DPAK Vishay General Semiconductor - Diodes Division |
1,940 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 800 V | 8A | 1.1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
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FESF16JT-E3/45DIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
220 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 16A | 1.5 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | ITO-220AC | -65°C ~ 150°C |
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VS-10ETS12FP-M3DIODE GP 1.2KV 10A TO220-2FP Vishay General Semiconductor - Diodes Division |
1,692 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1200 V | 10A | 1.1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-20ETS08S-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
5,643 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 800 V | 20A | 1.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-20ETS12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,229 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 20A | 1.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-HFA08SD60STR-M3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,449 |
|
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HEXFRED® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 5 µA @ 600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |