| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV26DGPHE3/54DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,514 |
|
Tabla de datos |
SUPERECTIFIER® | DO-204AC, DO-15, Axial | Tape & Reel (TR) | Obsolete | Standard | 800 V | 1A | 2.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -65°C ~ 175°C |
|
BYV26EGPHE3/54DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,308 |
|
Tabla de datos |
SUPERECTIFIER® | DO-204AC, DO-15, Axial | Tape & Reel (TR) | Obsolete | Standard | 1000 V | 1A | 2.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -65°C ~ 175°C |
|
BYV29B-300-E3/81DIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,998 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 300 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
BYV29B-300HE3_A/IDIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,064 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 300 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
BYV29B-400-E3/81DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,329 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 400 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
BYV29B-400HE3_A/IDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,453 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 400 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
BYW27-200GPHE3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,278 |
|
Tabla de datos |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Standard | 200 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 200 nA @ 200 V | 8pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
|
BYW27-400GPHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,031 |
|
Tabla de datos |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Standard | 400 V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | 3 µs | - | 8pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
|
BYX10GPHE3/54DIODE GP 1.6KV 360MA DO204AL Vishay General Semiconductor - Diodes Division |
4,322 |
|
Tabla de datos |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Standard | 1600 V | 360mA | 1.6 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1600 V | - | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
CGP30HE3/54DIODE GEN PURP 1.4KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
4,516 |
|
Tabla de datos |
SUPERECTIFIER® | DO-201AD, Axial | Tape & Reel (TR) | Obsolete | Standard | 1400 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 15 µs | 5 µA @ 1400 V | 40pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |