Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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20ETF02DIODE GEN PURP 200V 20A TO220AC Vishay General Semiconductor - Diodes Division |
4,688 |
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- | TO-220-2 | Tube | Obsolete | Standard | 200 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 200 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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VS-30CPF06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,918 |
|
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- | TO-247-3 | Tube | Obsolete | Standard | 600 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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20ETF06DIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,808 |
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- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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HFA08PB60DIODE GP 600V 8A TO247AC Vishay General Semiconductor - Diodes Division |
2,679 |
|
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- | TO-247-2 | Tube | Obsolete | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 5 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
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VS-30CPF10PBFDIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
4,556 |
|
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- | TO-247-3 | Tube | Obsolete | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-C12ET07T-M3DIODE SIL CARB 650V 12A TO220AC Vishay General Semiconductor - Diodes Division |
2,746 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 65 µA @ 650 V | 515pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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40EPS12DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,004 |
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- | TO-247-2 | Tube | Obsolete | Standard | 1200 V | 40A | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-90APS08L-M3DIODE GEN PURP 800V 90A TO247AD Vishay General Semiconductor - Diodes Division |
3,891 |
|
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- | TO-247-3 | Tube | Active | Standard | 800 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-6F20DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,412 |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 6A | 1.1 V @ 19 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 200 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
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8TQ080SDIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,566 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Schottky | 80 V | 8A | 720 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550 µA @ 80 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |