Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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20TQ035SDIODE SCHOTTKY 35V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,284 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Schottky | 35 V | 20A | 570 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7 mA @ 35 V | 1400pF @ 5V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-HFA16TB120SHM3DIODE GEN PURP 1.2KV 16A TO263AB Vishay General Semiconductor - Diodes Division |
4,979 |
|
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HEXFRED® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 16A | 3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 20 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-HFA16TB120SLHM3DIODE GEN PURP 1.2KV 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,792 |
|
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HEXFRED® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 16A | 3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 20 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-HFA16TB120SRHM3DIODE GEN PURP 1.2KV 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,025 |
|
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HEXFRED® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 16A | 3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 20 µA @ 1200 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-20ETF02FP-M3DIODE GP 200V 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
2,753 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 200 V | 20A | 1.67 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-20ETF04FP-M3DIODE GP 400V 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
2,688 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 20A | 1.67 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 400 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-20ETF10FP-M3DIODE GP 1KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
3,183 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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8TQ100DIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,851 |
|
- |
- | TO-220-2 | Tube | Obsolete | Schottky | 100 V | 8A | 720 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550 µA @ 100 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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FESB8JTHE3_A/IDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,705 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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MBRB1645DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
4,756 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Schottky | 45 V | 16A | 630 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 45 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |