Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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8ETX06STRLDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,797 |
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FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 8A | 3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 50 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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V12PM6-M3/HDIODE SCHOTTKY 60V 12A TO277A Vishay General Semiconductor - Diodes Division |
4,974 |
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eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 60 V | 12A | 640 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 2050pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 175°C |
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VS-APU3006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,003 |
|
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FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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10ETS12DIODE GEN PURP 1.2KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
4,574 |
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- | TO-220-2 | Tube | Obsolete | Standard | 1200 V | 10A | 1.1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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15ETL06DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,857 |
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FRED Pt® | TO-220-2 | Tube | Obsolete | Standard | 600 V | 15A | 1.05 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -65°C ~ 175°C |
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10ETS08DIODE GEN PURP 800V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,258 |
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- | TO-220-2 | Tube | Obsolete | Standard | 800 V | 10A | 1.1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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AU2PK-M3/86ADIODE AVALANCHE 800V 1.3A TO277A Vishay General Semiconductor - Diodes Division |
2,724 |
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 800 V | 1.3A | 2.5 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 800 V | 29pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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P600A-E3/73DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
4,299 |
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- | P600, Axial | Cut Tape (CT) | Active | Standard | 50 V | 6A | 900 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 5 µA @ 50 V | 150pF @ 4V, 1MHz | - | - | Through Hole | P600 | -50°C ~ 150°C |
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VS-25ETS10S-M3DIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,539 |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1000 V | 25A | 1.14 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 1000 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-20ETS08STRR-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
4,960 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 800 V | 20A | 1.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |