Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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VS-8ETH03SHM3DIODE GEN PURP 300V 8A TO262AA Vishay General Semiconductor - Diodes Division |
3,655 |
|
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FRED Pt® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Standard | 300 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 300 V | - | Automotive | AEC-Q101 | Through Hole | TO-262AA | -55°C ~ 175°C |
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VS-MBRB1045TRRHM3DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,372 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 10A | 840 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 600pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-10ETF02S-M3DIODE GEN PURP 200V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,080 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 200 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | - |
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VS-10ETF02STRR-M3DIODE GEN PURP 200V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,253 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 200 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF04STRL-M3DIODE GEN PURP 400V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,022 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 400 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF04STRR-M3DIODE GEN PURP 400V 10A TO263AB Vishay General Semiconductor - Diodes Division |
4,357 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 400 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 480 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | - |
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VS-10ETF06STRR-M3DIODE GEN PURP 600V 10A TO263AB Vishay General Semiconductor - Diodes Division |
4,715 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF10STRL-M3DIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,502 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF10STRR-M3DIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,367 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF12STRR-M3DIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,332 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |