Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-MBRB1045TRLHM3DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,841 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 10A | 840 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 600pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-MBRB1035TRLHM3DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
4,466 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 35 V | 10A | 840 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | 600pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VS-MBRB1035TRRHM3DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,806 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 35 V | 10A | 840 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | 600pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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VB30120S-E3/8WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
4,637 |
|
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TMBS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 120 V | 30A | 1.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 120 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VB30120S-E3/4WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,761 |
|
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TMBS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Schottky | 120 V | 30A | 1.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 120 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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BYWF29-100HE3_A/PDIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
4,334 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 100 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 100 V | - | - | - | Through Hole | ITO-220AC | -65°C ~ 150°C |
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BYWF29-150HE3_A/PDIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
4,054 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 150 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 150 V | - | - | - | Through Hole | ITO-220AC | -65°C ~ 150°C |
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BYWF29-200HE3_A/PDIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,267 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 200 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | - | - | - | Through Hole | ITO-220AC | -65°C ~ 150°C |
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BYWF29-50HE3_A/PDIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,174 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 50 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 50 V | - | - | - | Through Hole | ITO-220AC | -65°C ~ 150°C |
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VS-8ETH03-1HM3DIODE GEN PURP 300V 8A TO262AA Vishay General Semiconductor - Diodes Division |
4,068 |
|
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FRED Pt® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Standard | 300 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 300 V | - | Automotive | AEC-Q101 | Through Hole | TO-262AA | -55°C ~ 175°C |