Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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AS4PDHM3_A/HDIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
4,335 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 200 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 200 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PDHM3_A/IDIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,896 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 200 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 200 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PGHM3_A/HDIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
4,476 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 400 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PGHM3_A/IDIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,692 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 400 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PJHM3_A/IDIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
4,032 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 600 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PKHM3_A/HDIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
4,081 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 800 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PKHM3_A/IDIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,312 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 800 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PMHM3_A/HDIODE AVALANCHE 1KV 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,318 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 1000 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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AS4PMHM3_A/IDIODE AVALANCHE 1KV 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,653 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 1000 V | 2.4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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VB20120S-E3/4WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,568 |
|
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TMBS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Schottky | 120 V | 20A | 1.12 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 120 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |