Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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VS-10WT10FNTRRDIODE SCHOTTKY 100V 10A DPAK Vishay General Semiconductor - Diodes Division |
4,833 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 10A | 810 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 400pF @ 5V, 1MHz | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 175°C |
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VS-10WT10FNDIODE SCHOTTKY 100V 10A TO252 Vishay General Semiconductor - Diodes Division |
2,015 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Schottky | 100 V | 10A | 810 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 175°C |
|
NS8AT-E3/45DIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
4,856 |
|
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- | TO-220-2 | Tube | Active | Standard | 50 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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NS8DT-E3/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,537 |
|
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- | TO-220-2 | Tube | Active | Standard | 200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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NS8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,121 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
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VS-8ETX06S-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,049 |
|
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FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 600 V | 8A | 3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 50 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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SS12P4S-M3/87ADIODE SCHOTTKY 40V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,429 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 40 V | 12A | 600 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 40 V | 750pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 150°C |
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BYM36A-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,995 |
|
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- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 200 V | 3A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
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BYM36B-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,688 |
|
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- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 400 V | 3A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 400 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
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BYT56D-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,457 |
|
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- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 200 V | 3A | 1.4 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |