Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE100PWJ-M3/IDIODE GEN PURP 600V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
4,289 |
|
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eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 10A | 1.14 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 2.6 µs | 20 µA @ 600 V | 78pF @ 4V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
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BYT51K-TAPDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,172 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 800 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT52J-TAPDIODE AVALANCHE 600V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,493 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT53C-TAPDIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,951 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 150 V | 1.9A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 150 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54J-TAPDIODE AVALANCHE 600V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
4,272 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYV15-TAPDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
4,507 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 1.5A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 800 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYW35-TAPDIODE AVALANCHE 500V 2A SOD57 Vishay General Semiconductor - Diodes Division |
4,718 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 500 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 500 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT51K-TRDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,066 |
|
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 800 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 800 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT53C-TRDIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,181 |
|
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 150 V | 1.9A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 150 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54J-TRDIODE AVALANCHE 600V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
4,705 |
|
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 600 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |