Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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SE40PGHM3_A/IDIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,356 |
|
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eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 200 V | 2.4A | 1.05 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 2.2 µs | 10 µA @ 200 V | 28pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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U3B-E3/9ATDIODE GEN PURP 100V 2A DO214AB Vishay General Semiconductor - Diodes Division |
3,214 |
|
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- | DO-214AB, SMC | Tape & Reel (TR) | Obsolete | Standard | 100 V | 2A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 100 V | - | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
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U3C-E3/9ATDIODE GEN PURP 150V 2A DO214AB Vishay General Semiconductor - Diodes Division |
2,852 |
|
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- | DO-214AB, SMC | Tape & Reel (TR) | Obsolete | Standard | 150 V | 2A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 150 V | - | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
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BY527TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,615 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 2A | 1.65 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 800 V | 16pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT52A-TAPDIODE AVALANCHE 50V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,522 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 50 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT52B-TAPDIODE AVALANCHE 100V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,763 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 100 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54A-TAPDIODE AVALANCHE 50V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
4,250 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 50 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 50 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54B-TAPDIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
4,961 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 100 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYV12-TAPDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
4,055 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 100 V | 1.5A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYV37-TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,391 |
|
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 800 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |