Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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SS29-M3/52TDIODE SCHOTTKY 90V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
4,403 |
|
![]() Tabla de datos |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Schottky | 90 V | 1.5A | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 90 V | - | - | - | Surface Mount | DO-214AA (SMB) | -55°C ~ 150°C |
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BYG21KHE3_A/IDIODE AVAL 800V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,389 |
|
![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 800 V | 1.5A | 1.6 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 1 µA @ 800 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG21MHE3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,588 |
|
![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 1000 V | 1.5A | 1.6 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 1 µA @ 1000 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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SS25-M3/52TDIODE SCHOTTKY 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,465 |
|
![]() Tabla de datos |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Schottky | 50 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 50 V | - | - | - | Surface Mount | DO-214AA (SMB) | -65°C ~ 150°C |
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SS26-M3/52TDIODE SCHOTTKY 60V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,882 |
|
![]() Tabla de datos |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Schottky | 60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 60 V | - | - | - | Surface Mount | DO-214AA (SMB) | -65°C ~ 150°C |
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MPG06B-E3/100DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
4,014 |
|
![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
|
MPG06D-E3/100DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,424 |
|
![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
|
MPG06G-E3/100DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,079 |
|
![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06K-E3/100DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,123 |
|
![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
|
MPG06M-E3/100DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
4,377 |
|
![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |