Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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MPG06GHE3_A/53DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,967 |
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![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06JHE3_A/53DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
4,220 |
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![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06KHE3_A/53DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
4,198 |
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![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06MHE3_A/53DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,331 |
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![]() Tabla de datos |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | MPG06 | -55°C ~ 150°C |
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UF4006-M3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
4,553 |
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![]() Tabla de datos |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 800 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
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BYG10D-M3/TR3DIODE AVAL 200V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,121 |
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![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 200 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 200 V | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG10G-M3/TR3DIODE AVAL 400V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
4,413 |
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![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 400 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 400 V | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG10J-M3/TR3DIODE AVAL 600V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
4,703 |
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![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 600 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 600 V | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG10K-M3/TR3DIODE AVAL 800V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,272 |
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![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 800 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 800 V | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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SSA34HE3/5ATDIODE SCHOTTKY 40V 3A DO214AC Vishay General Semiconductor - Diodes Division |
4,847 |
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![]() Tabla de datos |
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 3A | 490 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | - | - | Surface Mount | DO-214AC (SMA) | -65°C ~ 150°C |